• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.464-469
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• 1998

HF 세정후 자연 산화막의 존재가 급속 열처리 장비를 이용, 아르곤 분위기에서 열처리할 때 티타늄 실리사이드 형성을 관찰하였다. 고분해능 단면 투과 전자 현미경 관찰 결과 기판 온도가 상온일 때 자연산화막(native oxide)이 존재함을 확인하였으며 기판 온도가 40$0^{\circ}C$일 때는 실리콘 기판과 티타늄 박막의 계면 부위에서 자연산화막, 티타늄 및 실리콘이 혼합된 비정질층이 존재함을 확인하였다. 티타늄을 증착하는 동안 기판 온도를 40$0^{\circ}C$로 유지했을 때는 C54~$TiSi_2$상이 형성되는데 요구되는 급속 열처리(Rapid Thermal Annealing : RTA)온도가 기판 온도를 상오느로 유지 했을 때보다 $100^{\circ}C$정도 감소함을 확인하였다. 이 같은 결과는 산소불순물을 함유한 비정질 층이 핵생성 자리를 제공하여 이 상의 형성이 촉진된다는 사실을 말한다. 기판온도 $400^{\circ}C$에서 형성된 티타늄 실리사이드막의 경우 비저항 $\mu$$\Omega$cm임을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.278-286
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• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.921-928
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• 2007

Three different phosphonated trisbipyridine ruthenium complexes, [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)- (bpy)2Ru]·(PF6)2 (Ru-P1), [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P2), and [(4,4'-CH2PO- (OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P3) were synthesized and their photochemical and electrochemical properties were studied. These ruthenium complexes were strongly adsorbed on the surface of the layered metal oxide semiconductor K4Nb6O17 that was partially acid-exchanged and sensitized up to pH 10, while the carboxylated ruthenium complex, (4,4'-COOH-2,2'-bipyridine)3Ru·Cl2 (Ru-C) that was previously studied was sensitized only below pH 4. The visible light water reduction at K4Nb6O17 that was internally platinized and sensitized by these phosphonated Ru-complexes was comparatively studied using a reversible electron donor iodide.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.510-514
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• 2013

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. InGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilayer thin films have been deposited on XG glass substrate by RF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRD analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity property has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30% at IR range.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.