Browse > Article
http://dx.doi.org/10.4313/TEEM.2010.11.3.093

Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics  

Kim, Yong-Bin (Department of Electrical and Computer Engineering, Northeastern University)
Publication Information
Transactions on Electrical and Electronic Materials / v.11, no.3, 2010 , pp. 93-105 More about this Journal
Abstract
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.
Keywords
Nanoscale complementary metal-oxide-semiconductor; Scaling; Small-geometry effects; Short channel effects; Silicon-on-insulator technology; Nanoelectronics;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. K. Goel, IEEE Canadian Conference on Electrical and Computer Engineering (CCECE 2008) (Niagara Falls, ON 2008 May 4-7, IEEE) p. 189. [DOI: 10.1109/CCECE.2008.4564521].
2 A. Orailoglu, 37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks, Workshop on Dependable and Secure Nanocomputing (Edinburgh, UK 2007 Jun. 25-28, IEEE/IFIP). Available from: http://www.laas.fr/WDSN07/WDSN07_files/Texts/WDSN07-8D-04-Orailoglu.pdf.
3 R. I. Bahar, D. Hammerstrom, J. Harlow, W. H. Joyner Jr, C. Lau, D. Marculescu, A. Orailoglu, and M. Pedram, IEEE Computer, 40, 25 (2007)[DOI: 10.1109/MC.2007.7].
4 A. DeHon and K. K. Likharev, IEEE/ACM International Conference on Computer-Aided Design (ICCAD-2005) (San Jose, CA 2005 Nov. 6-10, IEEE) p. 375. [DOI: 10.1109/ICCAD.2005.1560097].
5 G. D. Hachtel and F. Somenzi, Logic Synthesis and Verification Algorithms, 2nd print., with corrections ed. (Kluwer Academic Publishers, Boston, 1998), pp. 25-41.
6 G. De Micheli, Synthesis and Optimization of Digital Circuits (McGraw-Hill, New York, 1994), pp. 75-97.
7 R. Zhang, Computer-Aided Design Algorithms and Tools for Nanotechnologies, Ph.D. dissertation (Princeton, NJ 2008, Princeton University).
8 S. C. Goldstein, Proceedings of Government Microcircuit Applications and Critical Technology Conference (GOMAC Tech 04) (Monterey, CA 2004).
9 R. H. Chen, A. N. Korotkov, and K. K. Likharev, Appl. Phys. Lett. 68, 1954 (1996) [DOI: 10.1063/1.115637].   DOI
10 K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 88, 183101 (2006) [DOI: 1063/1.2200475].   DOI   ScienceOn
11 K. Uchida, T. Tanamoto, R. Ohba, S. I. Yasuda, and S. Fujita, IEEE International Devices Meeting (IEDM) (San Francisco, CA 2002 Dec. 8-11, IEEE) p. 177.
12 N. Asahi, M. Akazawa, and Y. Amemiya, IEEE Trans. Electron Devices 44, 1109 (1997) [DOI: 10.1109/16.595938].   DOI   ScienceOn
13 C. S. Lent and P. D. Tougaw, J. Appl. Phys. 74, 6227 (1993) [DOI: 10.1063/1.355196].   DOI   ScienceOn
14 P. D. Tougaw and C. S. Lent, J. Appl. Phys. 75, 1818 (1994) [DOI: 10.1063/1.356375].   DOI   ScienceOn
15 C. S. Lent, P. D. Tougaw, W. Porod, and G. H. Bernstein, Nanotechnology 4, 49 (1993) [DOI: 10.1088/0957-4484/4/1/004].   DOI   ScienceOn
16 G. L. Snider, A. O. Orlov, V. Joshi, R. A. Joyce, Q. Hua, K. K. Yadavalli, G. H. Bernstein, T. P. Fehlner, and C. S. Lent, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) (Bajing, China 2008 Oct. 20-23) p. 549. [DOI: 10.1109/ICSICT.2008.4734600].
17 G. L. Snider, A. O. Orlov, R. K. Kummamuru, R. Ramasubramaniam, I. Amlani, G. H. Bernstein, C. S. Lent, J. L. Merz, and P. Wolfgang, Proceedings of the 2001 1st IEEE Conference on Nanotechnology (IEEE-NANO 2001) (Maui, HI 2008 Oct. 28-30, IEEE) p. 465. [DOI: 10.1109/NANO.2001.966468].
18 J. A. Hutchby, R. Cavin, V. Zhirnov, J. E. Brewer, and G. Bourianoff, Computer 41, 28 (2008) [DOI: 10.1109/MC.2008.154].
19 A. K. Goel, High-Speed VLSI Interconnections, 2nd ed. (Wiley-Interscience; IEEE Press, Hoboken, NJ, 2007).
20 Y. W. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 97(2006) [DOI: 10.1103/PhysRevLett.97.216803].
21 K. Mohanram and J. Guo, International Conference on Computer-Aided Design (ICCAD) (San Jose, CA 2008, IEEE) p. 412. [DOI: 10.1109/ICCAD.2008.4681607].
22 M. Choudhury, Y. Yoon, J. Guo, and K. Mohanram, 45th Design Automation Conference (DAC) (Anaheim, CA 2008, ACM) p. 272. [DOI: 10.1109/DAC.2008.4555822].
23 Y. Takahashi, A. Fujiwara, Y. Ono, and K. Murase, 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL'2000) (Portland, OR 2000, IEEE) p. 411.
24 C. Wasshuber, Computational Single-Electronics (Springer, Wien; New York, 2001).
25 H. Inokawa, A. Fujiwara, and Y. Takahashi, IEEE Trans. Electron Devices 50, 462 (2003) [DOI: 10.1109/TED.2002.808421].   DOI   ScienceOn
26 K. W. Song, Y. K. Lee, J. S. Sim, H. Jeoung, J. D. Lee, B. G. Park, Y. S. Jin, and Y. W. Kim, IEEE Trans. Electron Devices 52, 1845 (2005) [DOI: 10.1109/TED.2005.852730].   DOI   ScienceOn
27 M. Saitoh, H. Harata, and T. Hiramoto, IEEE International Electron Devices Meeting (IEDM) (San Francisco, CA 2004 Dec 13-15, IEEE) p. 187. [DOI: 10.1109/IEDM.2004.1419104].
28 S. Bandyopadhyay and V. Roychowdhury, Jpn. J. Appl. Phys. 35, 3350 (1996) [DOI: 10.1143/JJAP.35.335].   DOI
29 K. S. Park, S. J. Kim, I. B. Back, W. H. Lee, J. S. Kang, Y. B. Jo, S. D. Lee, C. K. Lee, J. B. Choi, J. H. Kim, K. H. Park, W. J. Cho, M. G. Jang, and S. J. Lee, IEEE Trans Nanotechnol. 4, 242 (2005) [DOI: 10.1109/TNANO.2004.837857].   DOI   ScienceOn
30 V. V. Zhirnov, J. A. Hutchby, G. I. Bourianoffls, and J. E. Brewer, IEEE Circuits Devices Mag. 21, 37 (2005) [DOI: 10.1109/MCD.2005.1438811].
31 N. Srivastava and K. Banerjee, IEEE/ACM International Conference on Computer-Aided Design (ICCAD-2005) (San Jose, CA 2005, IEEE/ACM) p. 383. [DOI: 10.1109/ICCAD.2005.1560098].
32 H. Dai, Surf. Sci. 500, 218 (2002) [DOI: 10.1016/S0039-6028(01)01558-8].   DOI   ScienceOn
33 M. S. Dresselhaus, G. Dresselhaus, and P. Avouris, Carbon nanotubes: Synthesis, Structure, Properties, and Applications (Springer, Berlin; New York, 2001).
34 P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, Proc. IEEE 91, 1772 (2003) [DOI: 10.1109/JPROC.2003.818338].
35 V. V. Zhirnov, J. A. Hutchby, G. I. Bourianoff, and J. E. Brewer, IEEE Circuits Devices Mag. 21, 37 (2005) [DOI: 10.1109/MCD.2005.1438811].
36 M. Lundstrom, Proceedings of the 2002 International Symposium on Low Power Electronics and Design (ISLPED '02) (Monterey, CA 2002, IEEE) p. 172.
37 J. Appenzeller, Proc. IEEE 96, 201 (2008) [DOI: 10.1109/JPROC.2007.911051].   DOI   ScienceOn
38 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004) [DOI: 10.1126/science.1102896].   DOI   ScienceOn
39 W. A. De Heer, C. Berger, E. Conrad, P. First, R. Murali, and J. Meindl, IEEE International Electron Devices Meeting (IEDM) (Washington, DC 2007 Dec. 10-12, IEEE) p. 199. [DOI: 10.1109/IEDM.2007.4418901].
40 M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98(2007) [DOI: 10.1103/PhysRevLett.98.206805].
41 X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008) [DOI: 10.1126/science.1150878].   DOI   ScienceOn
42 K. K. Likharev, Proc. IEEE 87, 606 (1999) [DOI: 10.1109/5.752518].   DOI   ScienceOn
43 C. M. Lieber and Z. L. Wang, MRS Bull. 32, 99 (2007).   DOI
44 W. Chee, S. Maikop, and C. Y. Yu, IEEE Circuits Devices Mag. 21, 21 (2005) [DOI: 10.1109/MCD.2005.1438752].
45 C. K. Maiti, International Workshop on Physics of Semiconductor Devices (IWPSD 2007) (Mumbai, India 2007 Dec. 16-20, IEEE) p. 52. [DOI: 10.1109/IWPSD.2007.4472453].
46 C. Auth, M. Buehler, A. Cappellani, C.-h. Choi, G. Ding, W. Han, S. Joshi, B. McIntyre, M. Prince, P. Ranade, J. Sandford, and C. Thomas, Intel Tech. J. 12, 77 (2008) [DOI: 10.1535/itj.1202.01].
47 W. Lu and C. M. Lieber, J. Phys. D: Appl. Phys. 39, R387 (2006) [DOI: 10.1088/0022-3727/39/21/R01].   DOI   ScienceOn
48 A. M. Morales and C. M. Lieber, Science 279, 208 (1998) [DOI: 10.1126/science.279.5348.208].   DOI   ScienceOn
49 W. Lu, J. Xiang, B. P. Timko, Y. Wu, and C. M. Lieber, Proc. Natl. Acad. Sci. U.S.A. 102, 10046 (2005) [DOI: 10.1073/pnas.0504581102].   DOI   ScienceOn
50 J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature 441, 489 (2006) [DOI: 10.1038/nature04796].   DOI   ScienceOn
51 Y. Wu, Y. Cui, L. Huynh, C. J. Barrelet, D. C. Bell, and C. M. Lieber, Nano Lett. 4, 433 (2004) [DOI: 10.1021/nl035162i].   DOI   ScienceOn
52 W. Lu, P. Xie, and C. M. Lieber, IEEE Trans. Electron Devices 55, 2859 (2008) [DOI: 10.1109/TED.2008.2005158].   DOI   ScienceOn
53 M. J. Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L. E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, and C. Zhou, IEEE Trans. Electron Devices 55, 2813 (2008) [DOI: 10.1109/TED.2008.2006781].   DOI   ScienceOn
54 Y. Xiaobin, P. Jae-Eun, W. Jing, Z. Enhai, D. Ahlgren, T. Hook, Y. Jun, V. Chan, S. Huiling, L. Chu-Hsin, R. Lindsay, P. Sungjoon, and C. Hyotae, IEEE International Integrated Reliability Workshop Final Report (IRW 2007) (South Lake Tahoe, CA 2007 Oct. 15-18, IEEE) p. 70. [DOI: 10.1109/IRWS.2007.4469224].
55 S. Iijima, Nature 354, 56 (1991) [DOI: 10.1038/354056a0].   DOI
56 K. C. Saraswat, International Symposium on VLSI Technology Systems and Applications (VLSI-TSA) (Hsinchu 2007 Apr. 23-25, IEEE) p. 1. [DOI: 10.1109/VTSA.2007.378944].
57 S. A. Parke, J. E. Moon, H.-j. C. Wann, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices 39, 1694 (1992) [DOI: 10.1109/16.141236].   DOI   ScienceOn
58 L. Chang, Y. K. Choi, D. Ha, P. Ranade, S. Xiong, J. Bokor, C. Hu, and T. J. King, Proc. IEEE 91, 1860 (2003) [DOI: 10.1109/JPROC.2003.818336].
59 T. Sakurai, A. Matsuzawa, and T. Douseki, Fully-Depleted SOI CMOS Circuits and Technology for Ultra-Low Power Applications (Springer, Dordrecht, The Netherlands, 2006).
60 R. Simonton, Special Report SOI Wafer Technology for CMOS ICs [Electronic Document] (Simonton Associates, 2002) Available from: http://www.icknowledge.com/threshold_simonton/soitechnology.pdf.
61 A. Jakubowski and L. LUkasiak, Mater. Sci. -Poland 26, 5 (2008).
62 D. Hisamoto, W. C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T. J. King, F. Jeffrey Bokor, and C. Hu, IEEE Trans. Electron Devices 47, 2320 (2000).   DOI   ScienceOn
63 A. K. Sharma and A. Teverovsky, Reliability Evaluation of Fully Depleted SOI (FDSOI) Technology for Space Applications [Electronic Document] (NASA Electronic Parts and Packaging (NEPP) Program, 2001). Available from: http://nepp.nasa.gov/docuploads/f8b88988-9a2d-462b-986eb801f50978a9/eval_fdsoiparti_neppfinalreport.pdf.
64 P. J. Wright and K. C. Saraswat, IEEE Trans. Electron Devices 37, 1884 (1990) [DOI: 10.1109/16.57140].   DOI   ScienceOn
65 N. Mohta and S. E. Thompson, IEEE Circuits Devices Mag. 21, 18 (2005) [DOI: 10.1109/MCD.2005.1517386].
66 V. V. Zhirnov, R. K. Cavin Iii, J. A. Hutchby, and G. I. Bourianoff, Proc. IEEE 91, 1934 (2003) [DOI: 10.1109/JPROC.2003.818324].
67 V. George, S. Jahagirdar, C. Tong, K. Smits, S. Damaraju, S. Siers, V. Naydenov, T. Khondker, S. Sarkar, and P. Singh, 2007 IEEE Asian Solid-State Circuits Conference (A-SSCC) ( Jeju, Korea 2007 Nov. 12-14, IEEE) p. 14. [DOI: 10.1109/ASSCC.2007.4425784].
68 G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001) [DOI: 10.1063/1.1361065].   DOI   ScienceOn
69 G. M. T. Wong, An Investigation of the Work Function of Metal Gate Electrodes for Advanced CMOS Applications, Ph.D. dissertation (Palo Alto, CA 2008, Stanford University).
70 K. S. Chang, M. L. Green, J. R. Hattrick-Simpers, I. Takeuchi, J. S. Suehle, O. Celik, and S. De Gendt, IEEE Trans. Electron Devices 55, 2641 (2008) [DOI: 10.1109/TED.2008.2003091].   DOI   ScienceOn
71 S. D. Kim, C. M. Park, and J. C. S. Woo, IEEE Trans. Electron Devices 49, 457 (2002) [DOI: 10.1109/16.987117].   DOI   ScienceOn
72 T. Krishnamohan, Physics and Technology of High Mobility, Strained Germanium Channel, Heterostructure MOSFETs, Ph.D. dissertation (Palo Alto, CA 2006, Stanford University).
73 M. Ieong, IEEE Nanotechnology Materials and Devices Conference (NMDC) (Gyeongju, Korea 2006 Oct. 22-25, IEEE) p. 88. [DOI: 10.1109/NMDC.2006.4388702].
74 M. C. Chang, C. S. Chang, C. P. Chao, K. I. Goto, M. Ieong, L. C. Lu, and C. H. Diaz, IEEE Trans. Electron Devices 55, 84 (2008) [DOI: 10.1109/TED.2007.911348].   DOI   ScienceOn
75 S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol. 3: The Submicron MOSFET (Lattice Press, Sunset Beach, CA, 1986).
76 K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, Proc. IEEE 91, 305 (2003) [DOI: 10.1109/JPROC.2002.808156].   DOI   ScienceOn
77 I. M. Bateman, G. A. Armstrong, and J. A. Magowan, 19th International Electron Devices Meeting. Technical Digest (Washington, DC 1973 Dec. 3-5, IEEE Group on Electron Devices) p. 147.
78 S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, IEEE J. Solid-State Circuits 15, 424 (1980).   DOI
79 I. De and C. M. Osburn, IEEE Trans Electron Devices 46, 1711 (1999) [DOI: 10.1109/16.777161].   DOI   ScienceOn
80 T. Mizuno, J.-I. Okamura, and A. Toriumi, IEEE Trans. Electron Devices 41, 2216 (1994) [DOI: 10.1109/16.333844].   DOI   ScienceOn
81 A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, IEEE Trans. Electron Devices 48, 722 (2001) [DOI: 10.1109/16.915703].   DOI   ScienceOn
82 Y. Ye, F. Liu, S. Nassif, and Y. Cao, Proceedings of the 45th Annual Design Automation Conference (Anaheim, CA 2008 Jun. 8-13, ACM/IEEE) p. 900. [DOI: 10.1145/1391469.1391698].
83 R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, Reading, MA, 1996) p. 691.
84 B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill Higher Education, Boston, 2005) p. 124, p. 425.
85 M. Stockinger, Optimization of Ultra-Low-Power CMOS Transistors, Ph.D. dissertation (Vienna, Austria 2000, Institute for Microelectronics).
86 R. R. Troutman, IEEE J. Solid-State Circuits 14, 383 (1979).   DOI
87 G. E. Moore, International Electron Devices Meeting. Technical Digest (Washington, DC 1975 Dec. 1-3, IEEE Group on Electron Devices) p. 11.
88 P. A. Gargini, International Symposium on VLSI Technology Systems and Applications (VLSI-TSA) (Hsinchu 2008 Apr. 21-23, IEEE) p. 10. [DOI: 10.1109/VTSA.2008.4530775].
89 H. Iwai, Extended Abstracts 2008 8th International Workshop on Junction Technology (IWJT '08) (Shanghai, China 2008 May 15-16, IEEE Press) p. 1. [DOI: 10.1109/IWJT.2008.4540004].
90 G. E. Moore, Electronics 38, (1965).
91 International Technology Roadmap for Semiconductors(ITRS) 2007 Edition. Available from: http://www.itrs.net/links/2007ITRS/Home2007.htm.
92 D. Kahng and M. M. Atalla, the IRE Solid-State Device Research Conference (Pittsburgh, PA 1960 Jun., Carnegie Institute of Technology).
93 R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. R. LeBlanc, IEEE J. Solid-State Circuits SC-9, 256 (1974).
94 D. A. Antoniadis, I. Aberg, C. Ní Chleirigh, O. M. Nayfeh, A. Khakifirooz, and J. L. Hoyt, IBM J. Res. Dev. 50, 363 (2006) [DOI: 10.1147/rd.504.0363].   DOI
95 M. Horowitz, E. Alon, D. Patil, S. Naffziger, R. Kumar, and K. Bernstein, IEEE International Electron Devices Meeting. IEDM Technical Digest (Washington, DC 2005 Dec. 5-7, IEEE Group on Electron Devices) p. 7. [DOI: 10.1109/IEDM.2005.1609253].
96 H. S. P. Wong, D. J. Frank, P. M. Solomon, C. H. J. Wann, and J. J. Welser, Proc. IEEE 87, 537 (1999) [DOI: 10.1109/5.752515].   DOI   ScienceOn
97 B. Razavi, Design of Analog CMOS Integrated Circuits (McGraw-Hill, Boston, MA, 2001).
98 D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H. S. P. Wong, Proc. IEEE 89, 259 (2001) [DOI: 10.1109/5.915374].   DOI   ScienceOn