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A Study on the Relationship between Oxygen and Carrier Concentration in a GZO Film on an Amorphous Structure  

Kim, Do Hyoung (Electronic Engineering, Choenju University)
Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.14, no.4, 2015 , pp. 25-29 More about this Journal
Abstract
In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.
Keywords
energy band gap; oxygen vacancies; amorphous;
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