Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

A Study on the Relationship between Oxygen and Carrier Concentration in a GZO Film on an Amorphous Structure

GZO 박막에 대한 비정질 구조에 따른 산소공공과 전하농도의 연관성에 대한 연구

  • Kim, Do Hyoung (Electronic Engineering, Choenju University) ;
  • Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
  • 김도형 (청주대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과)
  • Received : 2015.11.06
  • Accepted : 2015.11.30
  • Published : 2015.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

Keywords

References

  1. C. G. Granqvist, "Transparent conductors as solar energy materials: A panoramic review", Solar Energy Materials & Solar Cells, 91, pp. 1529-1598, (2007). https://doi.org/10.1016/j.solmat.2007.04.031
  2. Zafar S, Ferekides C. S., Morel D. L., "Characterization and analysis of ZnO:Al deposited by reactive magnetron sputtering", J. Vac. Sci. Tech., 13, pp. 2177-2182, (1995). https://doi.org/10.1116/1.579539
  3. G. N. Advani., A. G. Jordan., "Stability of $SnO_2$ thin films used for photovoltaic devices", Solar Energy, 30(1), pp. 71-73, (1983). https://doi.org/10.1016/0038-092X(83)90007-5
  4. Z. C. Jin., I. Harmberg and C. G. Granqvist, "Optical properties of sputter-deposited ZnO:Al thin films", J. Appl. Phys., 64, pp. 5117-31, (1988). https://doi.org/10.1063/1.342419
  5. W. M. Duncan, J. W. Lee, R. J. Matyi and H. Y. Liu, "Photoluminescence and X-ray properties of heteroepitaxial gallium arsenide on silicon", J. Appl. Phys., 59, pp. 2161-2164, (1986). https://doi.org/10.1063/1.336353
  6. Simon L. King., J. G. E. Gardeniers., "Pulsed-laser deposited ZnO for device applications", Applied Surface Science, 96-98, pp. 811-818, (1996). https://doi.org/10.1016/0169-4332(96)80027-4
  7. Y. L. Liu., Y. C. Liu., "Structural and optical properties of nanocrystalline ZnO films grown by cathodic electrodeposition on Si substrates", Applied Physics B, 322(1), pp. 31-36, (2000).
  8. H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao, and D. C. Look, "Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy", Appl. Phys. Lett., 77, pp. 37-61, (2000). https://doi.org/10.1063/1.126869
  9. B. E. Semelius, K. F. Berggren, Z. C. Jin, I. Hamberg, and C. G. Graqvist, "Band-gap tailoring of ZnO by means of heavy Al doping", Phys. Rev. B 37, 10244, (1988). https://doi.org/10.1103/PhysRevB.37.10244