Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Effect of Recombination and Decreasing Low Current on Barrier Potential of Zinc Tin Oxide Thin-Film Transistors According to Annealing Condition

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2019.04.13
  • Accepted : 2019.05.22
  • Published : 2019.06.30
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Abstract

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

Keywords

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Fig. 1. Performance of zinc tin oxide (ZTO) transistor: (a) IDS–VGS transfer characteristics, (b) logarithm of transfer characteristics under atmospheric conditions, (c) IDS–VGS transfer characteristics, and (d) logarithm of transfer characteristics in a vacuum.

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Fig. 2. Schematic diagram of zinc tin oxide (ZTO) thin-film transistor and operation mechanism.

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Fig. 3. IDS–VGS transfer characteristics in accordance with the annealing condition at VDS= 0.0001 V.

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Fig. 4. Schottky contact effect and IDS measurement during forward and reverse VGS, to observe the IDS–VGS transfer characteristics depending on VDS. (a) VDS = 0.0001 V, (b) VDS = 1 V, and (c) VDS = 5 V.

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Fig. 5. Increase in barrier potential due to the extension of depletion layer in the region of VG < 0 V.

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Fig. 6. Logarithm of IDS–VGS transfer characteristics for VDS = 0.0001 V.

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