• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.8
• /
• pp.582-586
• /
• 2013

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.5-8
• /
• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.11
• /
• pp.517-525
• /
• 2002

The channel region of seep-sub-micrometer MOSFET is non-uniformly doped with pocket implant. Therefore, the advanced threshold voltage model is needed to account for the Short-Channel Effect and Reverse-Short-Channel Effect due to the non-uniform doping concentration in the channel region. In this paper, A scalable analytical model for the MOSFET threshold voltage is developed. The developed model is verified with MEDICI and TSUPREM simulator.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.6
• /
• pp.58-62
• /
• 1985

Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.12 s.354
• /
• pp.33-39
• /
• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Journal of the Korean Society of Industry Convergence
• /
• v.4 no.3
• /
• pp.329-337
• /
• 2001

This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.2
• /
• pp.7-12
• /
• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.13 no.5
• /
• pp.959-964
• /
• 2018

In this paper, it was firstly confirmed that the drain current of the depleted SOI MOSFET operated in the high frequency response delay occurs by the inductive parasitic. Depleted SOI MOSFET cannot be applied as a conventional high-frequency MOSFET model because the response delay of the drain current is generated in accordance with the drain voltage fluctuation. This response delay may be described as a non-quasi-static effect, and the SOI MOSFET generated the response delay by the inductive parasitics compared to typical MOSFET. It is confirmed that depleted SOI MOSFET's RF characteristics can be well reproduced with the proposed method including the drain current response delay.

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1991.10a
• /
• pp.205-209
• /
• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.10
• /
• pp.1840-1844
• /
• 2008

In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.