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A Study on Improved SPICE MOSFET RF Model Considering Wide Width Effect  

Cha, Ji-Yong (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Cha, Jun-Young (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Lee, Seong-Hearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.2, 2008 , pp. 7-12 More about this Journal
Abstract
In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.
Keywords
RF CMOS; MOSFET; modeling; RF model; SPICE model; BSIM3v3;
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