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http://dx.doi.org/10.6109/jkiice.2008.12.10.1840

Analysis of Channel Doping Concentration Dependent Subthreshold Characteristics for Double Gate MOSFET  

Jung, Hak-Kee (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.12, no.10, 2008 , pp. 1840-1844 More about this Journal
Abstract
In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.
Keywords
이중게이트 MOSFET;포아슨방정식;서브문턱스윙;채널도핑농도;
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