• Proceedings of the KSR Conference
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• 2006.11b
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• pp.1380-1384
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• 2006

Sediments deposited on lateral drain pipes in a tunnel make lateral porous pipes clogged. Since the safety of the tunnel can be affected by this phenomenon, it requires a regular maintenance of the lateral drain pipes. In this study, a series of centrifugal tests were conducted in order to find out the method which can reduce the clogging effect considerably. Four different types of tunnel drain configurations were selected in the experiments. By analysis of sediments for each configuration, the optimum drain configuration that can minimize sedimentation of cement constituents was investigated. As a results, the existing drain configuration which uses filter concrete appear to produce much sediments. In contrast, the new drain configuration appears to be able to reduce sedimentation ratio up to almost 50% comparing with the existing one. From these observations, it may be concluded that the new drain configuration, in which the lateral porous pipes of a tunnel are surrounded by gravel layer and non-woven geotextile, has high efficiency in maintenance.

• Journal of the Korean Geotechnical Society
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• v.24 no.10
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• pp.5-15
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• 2008

The purpose of this study is to examine the validity of recycled aggregates (RAs) as a substitute for Sand-Mat material for soft ground improvement in the housing site development. To evaluate the possibility of RAs as a substitute for sand mat material, first of all, the criteria and regulations related with the quality of lateral drain layer were collected and checked. Secondly, both of the properties of RAs were compared with the properties of natural sand for the lateral drain layer. The material properties related to coefficient of permeability, pressure at-rest state and so on satisfied most standards. On the basis of the test results, RAs were used to the construction site as lateral drain layer. Accordingly, if the quality of RAs can be managed well, the application of these RAs as lateral drain layer to replace natural sand was highly effective. Also, based on cost analysis of two materials, RAs are proved to be very competitive.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.2
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• pp.235-238
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• 2008

This paper explores 28 nm MOSFET design for LSTP(Low Standby Power) applications using TCAD(Technology Computer Aided Design) simulation. Simulated results show that the leakage current of the MOSFET is increasingly dominated by GIDL(Gate Induced Drain Leakage) instead of a subthreshold leakage as the Source/Drain extension doping increases. The GIDL current can be reduced by grading lateral abruptness of the drain at the expense of a higher Source/Drain series resistance. For 28 nm MOSFET suggested in ITRS, we have shown Source/Drain design becomes even more critical to meet both leakage current and performance requirement.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.342-343
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• 2012

We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.293-299
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• 2008

If a conventional type of Plastic Board Drain (PBD) is installed to the deep clay deposit, it is subjected to a high lateral earth pressure. a flow channel of PBD may be reduced by the collapse of cores and clogged by the intrusion of filter into the space between cores which are made by lateral pressure. It could decrease the ability of initial discharge capacity and the reliability of long term discharge capacity. A cylindrical plastic board drain (C-PBD) considered in this study consists of cylindrical core and several supports so that it can prevent the reduction of area of flow channel from the higher lateral earth pressure effectively. The discharge capacity of C-PBD was compared to that of a conventional PBD through performing experiments using the composite discharge capacity apparatus which can consider in-situ condition such as penetration of drains, ground settlement and discharge capacity. As a result, C-PBD showed much better performance than PBD in the ability of discharge. It was observed that the C-PBD was folded whereas the conventional PBD was folded after the experiment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.62-66
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• 2011

In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.

• Journal of the Korean Geosynthetics Society
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• v.4 no.3
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• pp.3-10
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• 2005

This paper aims at investigating the characteristics of discharge capacity according to lateral pressure, hydraulic gradient and deformation of drain materials. A series of experiments were conducted to achieve this objective. In experiments, fiver drain boards as well as harmonica and castle types of drain boards were installed in a rubber membrane, and clay in sully was filled around them. The test results showed that the harmonica type of drain boards have the greatest discharge capacity comparing to castle and fiber drain boards. The results also indicated that the hydraulic gradient has more effect on reduction of discharge capacity than the lateral pressure.

• Magazine of the Korean Society of Agricultural Engineers
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• v.44 no.1
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• pp.142-154
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• 2002

This study was performed to investigate constraint effects of deformation (heaving, lateral displacement) of clayey foundation reinforced with sheet pile at the tip of banking on soft ground, under intact state (natural) and the state of vertical drain respectively. The following results are obtained. 1. In view of reduction in heaving or lateral displacement, sheet pile is not supposed to be of use. 2. Sheet pile is effective only when vertical drain is installed for acceleration of consolidation and gradual loading is applied.