Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 1
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- Pages.54-60
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- 1994
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- 1016-135X(pISSN)
Lateral Electric Field Model and Degradation Mechanism of surface-Channel PMOSFET's
SC PMOSFET의 수평 전개 모델과 노쇠화 메카니즘
Abstract
In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.
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