• 대한기계학회논문집
• /
• 제18권3호
• /
• pp.540-547
• /
• 1994

Contact and frictional locking conditions and the effect of shielding due to contact at the facet, which could be represented by the difference in energy release rate, as a function of phase angle of loading are analyzed in this study for the case of interfacial cracks by assuming single crack-kink model. The analysis of contact effects on interfacial fracture resistance shows that relative shielding increases as the shear component was increased, which indicates a qualitative agreement with the previous experimental results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.99-100
• /
• 2009

SGOI 1T-DRAM cells with various Ge mole fractions were fabricated and compared to the SOI 1T-DRAM cell. SGOI 1T-DRAM cells have a higher leakage current than SOI 1T-DRAM cell at subthreshold region. The leakage current due to crystalline defects and interface states at Si/SiGe increased with Ge mole. This phenomenon causes sensing margin and the retention time of SGOI 1T-DRAMs decreased with increase of Ge mole fraction.

• 한국전기전자재료학회논문지
• /
• 제25권2호
• /
• pp.96-99
• /
• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

• Journal of Mechanical Science and Technology
• /
• 제19권3호
• /
• pp.802-810
• /
• 2005

Deformations of single crystals were studied using finite element analysis to investigate the localized modes and the orientation dependence of plastic deformation observed in single crystals. Investigation of mechanical properties of single crystals is closely related with the understanding of deformation processes in single crystals. Localized bands such as shear and kink were studied and the material and geometric characteristics that influence the formation of such localized bands were investigated. Orientation dependence of material behavior in NiAl single crystals was studied by rotating slip directions from 'hard' orientation. The maximum nominal compressed stress in NiAl single crystals was widely ranged depending on the misalignment from 'hard' orientation. As the compression axis was set closer to 'hard' orientation, the maximum nominal compressed stress was rapidly increased and made <100> slips difficult to activate. Therefore, non-<100> slips will be activated instead of <100> slips for 'hard' orientation.

• 대한수학회논문집
• /
• 제35권2호
• /
• pp.685-695
• /
• 2020

In this paper, we used modified tanh-coth method, combined with Riccati equation and secant hyperbolic ansatz to construct abundantly many real and complex exact travelling wave solutions to KdV-Burgers (KdVB) equation with forcing term. The real part is the sum of the shock wave solution of a Burgers equation and the solitary wave solution of a KdV equation with forcing term, while the imaginary part is the product of a shock wave solution of Burgers with a solitary wave travelling solution of KdV equation. The method gives more solutions than the previous methods.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1442-1444
• /
• 2001

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si TFT driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.233-236
• /
• 2000

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1462-1464
• /
• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 D
• /
• pp.2690-2692
• /
• 2004

Medications or cognitive-behavior methods have been mainly used as a treatment of alcoholism. lately the virtualy technology has been applied to the kink of alcoholic disorders. A virtual environment makes him having ability to over come the drink. In this study, we were implemented by making panorama images and 3D object modules using 3D Studio MAX. VRML, JAVA Applet. And the BAR stimulator that composed with a position sensor head mount display, and audio system, is suggested. To illustrate the physiological difference between a person who has a alcoholism and and without a liquor bottle, heart rate was measured during experiment, and also measured a Person's HR after the virtual reality training. we demonstrated the subjective effectiveness of virtual reality psychotherapy through the clinical experiment.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.711-714
• /
• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.