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http://dx.doi.org/10.4313/JKEM.2012.25.2.96

Memory Characteristics of 1T-DRAM Cell by Channel Structure  

Jang, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University)
Jung, Seung-Min (Department of Electronic Materials Engineering, Kwangwoon University)
Park, Jin-Kwon (Department of Electronic Materials Engineering, Kwangwoon University)
Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.2, 2012 , pp. 96-99 More about this Journal
Abstract
We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.
Keywords
Impact ionization (II); Kink effect; Floating body effect; Gate induced drain leakage (GIDL);
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