• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.61-66
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• 2020

Threshold voltage shift occurring during operation is implemented in a SPICE simulation tool. Among the shift models the stretched-exponential function model, which is frequently observed from both single-crystal silicon and thin-film transistors regardless of the nature of causes, is selected, adapted to transient simulation, and added to BSIM4 developed by BSIM Research Group at the University of California, Berkeley. The adaptation method used in this research is to select degradation and recovery models based on the comparison between the gate and threshold voltages. The threshold voltage shift is extracted from SPICE transient simulation and shows the stretched-exponential time dependence for both degradation and recovery situations. The implementation method developed in this research is not limited to the stretched-exponential function model and BSIM model. The proposed method enables to perform transient simulation with threshold voltage shift in situ and will help to verify the reliability of a circuit.

• 대한한의학방제학회지
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• 제18권2호
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• pp.15-23
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• 2010

The spice phenomenon therapy is to adhibit aromatic herbs or materials to the human body or clothing, for the purpose of preventing and treating diseases. Mankind found the fire, and found that some plants and trees give off smoke when they are burning. Then, they found that some of aromatic substances had certain actions after being absorbed through the respiratory organ, which was the beginning of the spice phenomenon therapy. The spice phenomenon therapy is effective to relieve the exterior syndrome, to eliminate dampness, to regulate Qi flow, and to induce resuscitation. It has two actions. One is that the aromas that permeated the body, refreshes the mind, stimulates the appetite, strengthens the spleen and the stomach, and makes a relaxing sleep. The other is that the aromatic substances, absorbed into the human body, have pharmacological actions. The volatile aromatic substances have various pharmacological actions such as stimulating cranial nerves, dilating cardiac blood vessels, promoting gastric secretion, relaxing and sleep-inducing. It has been proved that the spice phenomenon therapy is anti-inflammatory and anti-microbial and is effective to dilate cerebral blood vessels and to ease the pain. It is expected to be studied more aggressively.

• 센서학회지
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• 제24권5호
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• 대한전자공학회논문지
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• 제24권5호
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• 대한전자공학회논문지SD
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• 제47권4호
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• pp.7-12
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• 2010

열전소자의 SPICE 모델을 유도하였고, Harman method를 이용하여 전기적인 측정과 열전 소자 양단면의 온도 측정값 만으로 모델 파라미터를 추출하기 위한 방법을 제시하였다. 본 논문에서 제시된 SPICE 모델 파라미터 추출방식은 열전도 측정 데이터를 사용하지 않고, 모델 파라미터를 추출할 수 있으며, 기존의 열전도 측정에 의한 값과 비교하였을 때 오차가 크지 않아서 실제로 열전 모듈을 제작하였을 때 유용하게 사용할 수 있는 방법이 될 수 있음을 보였다. 제시된 SPICE 모델은 열전모듈을 이용한 냉각 장치와 열전 발전 장치의 열적 시뮬레이션과 전기적인 시뮬레이션에 모두 적용이 가능하다.

• 대한안전경영과학회지
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• 제7권4호
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• pp.141-163
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• 2005

The international SPICE (Software Process Improvement and Capability determination) Project ISO/IEC 15504(SPICE : Software Process Improvement and Capability determination) is an emerging International Standard on SPA(Software Process Assessment). A prime motivation for developing this standard has been the perceived need for an internationally recognized software process assessment framework that pulls together the existing public and proprietary models and methods. A SPICE assessment can be considered as one of representative SPA model since assessors assign ratings to indicators and metrics to measure the capability of software process. But this models doesn't provide a systematic measurement procedures and dynamic method for SPI(Software Process Improvement). Through the evaluation of SPICE is capable of providing a substantiated basis for using the notion of capability, as well as providing information for nacessary improvements to the standard using 6sigma process. As a result, this paper propose a measurement procedure and guidelines for application of 6sigma process to guarantee the reliability in SPI and suggest the structure to support SPI on overall organization.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.455-458
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• 1994

This paper deals with the analysis of a DC servo motel speed control system with PI-controller using the SPICE, which was developed as n simulation program for electronic circuits. The system including PI-controller is needed to be modelled for SPICE analysis. The system is divided to motor part, power conversion part, and control part for effective simulations. The overall system is reconstructed by using the above models and the steady-state and transient state are analyzed through SPICE simulations. The simulation results are verified by comparing with the results obtained by conventional simulations.

• 전자공학회논문지B
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• 제28B권5호
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• pp.411-420
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• 1991

In this paper, SPICE program which is widely used in analysis of general circuit on electronic and electrical field has been applied to DC-DC converter. We have selected Forward type which is widely used us SMPS(Switched Mode Power Supply) of various electronic equipments, and have confirmed the waveforms of circuit operation, transfer of energy and resetting in transformer. And the procedure which the output voltage of converter, including the control circuit, has been stabilized from the transient state to the steady state by controlling the duty ratio of switch is presented. We have compared SPICE simulation with experiment and have verified the validity of SPICE simulation.

• 한국정보통신학회논문지
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• 제21권8호
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• pp.1465-1470
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• 2017

기존의 MOSFET에서는 반전층보다 항상 실리콘 두께가 크기 때문에 드레인유도 장벽감소가 실리콘 두께에 관계없이 산화막 두께 및 채널길이의 함수로 표현되었다. 그러나 10 nm 이하 저도핑 이중게이트 구조에서는 실리콘 두께 전체가 공핍층이 형성되기 때문에 기존의 SPICE 모델을 사용할 수 없게 되었다. 그러므로 이중게이트 MOSFET에 대한 새로운 SPICE 용 드레인유도 장벽감소 모델을 제시하고자 한다. 이를 분석하기 위하여 전위분포와 WKB 근사를 이용하여 열방사 및 터널링 전류를 구하였다. 결과적으로 드레인유도 장벽감소는 상하단 산화막 두께의 합 그리고 실리콘 두께의 2승에 비례하며 채널길이의 3승에 반비례한다는 것을 알 수 있었다. 특히 SPICE 파라미터인 정적 궤환계수가 1과 2사이에서 사용할 수 있어 합당한 파라미터로써 사용할 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.200-201
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• 2017

이 논문은 3D 순차적 CMOS 인버터 회로의 전기적 상호작용을 고려한 시뮬레이션을 제시하고자 한다. 상층 NMOS는 BSIM-IMG, 하층 PMOS에는 LETI-UTSOI 모델을 사용하여 전기적 상호작용이 잘 반영되는지 TCAD 데이터와 SPICE 데이터를 비교하였다. 트랜지스터 간의 높이가 작을 때 하층 게이트의 전압의 변화에 따라 상층 전류-전압 특성에 전기적 상호작용이 잘 반영되는 것을 확인하였다.