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http://dx.doi.org/10.5369/JSST.2015.24.5.353

A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate  

Jo, Sung-Hyun (School of Electronics Engineering, Kyungpook National University)
Bae, Myunghan (School of Electronics Engineering, Kyungpook National University)
Choi, Byoung-Soo (School of Electronics Engineering, Kyungpook National University)
Choi, Pyung (School of Electronics Engineering, Kyungpook National University)
Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of Sensor Science and Technology / v.24, no.5, 2015 , pp. 353-357 More about this Journal
Abstract
A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.
Keywords
High-sensitivity; Gate/body-tied photodetector; SPICE model;
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Times Cited By KSCI : 2  (Citation Analysis)
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