• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.24-29
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• 2009

In order to model the high temperature dependence of the cutoff frequency $f_T$ in $0.18{\mu}m$ deep n-well isolated bulk NMOSFET, high temperature data of electron velocity of bulk MOSFETs from $30^{\circ}C$ to $250^{\circ}C$ are obtained by an accurate RF extraction method using measured S-parameters. From these data, an improved temperature-dependent electron velocity equation is developed and implemented in a BSIM3v3 SPICE model to eliminate modeling error of a conventional one in the high temperature range. Better agreement with measured $f_T$ data from $30^{\circ}C$ to $250^{\circ}C$ are achieved by using the SPICE model with the improved equation rather than the conventional one, verifying its accuracy of the improved one.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.316-318
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• 2006

It can be considered that the safety of software is combined with that of hardware, and also directly connected to system safety. Because the software in the railway system takes the form of Embedded that let it behave at the system level, instead of independent operation, the safety of the railway S/W is also important. The approach, for ensuring the quality and safety of those software, can be considered with two points of view. Those are views seeing from products, and from processes. The two points of approach are all necessary in the railway system. For the first of all, the process approach is to validate maturity of the organizations in accordance to the judging processes of organizations, which are specified by CMMI(Capability Maturity Model Integration) or SPICE(Software Process Improvement and Capability dEtermination: ISO/IECl5504). In this paper, as the first step of them, we are trying to find approaches to estimate the maturity of manufacturer and assessment organization in the railway system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.341-346
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• 2013

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.503-505
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• 2007

효율적인 LCD Backlight 구동 시스템 설계를 위해서는 CCFL에 대한 전기적 특성 파악이 중요하지만 디스플레이의 대형화에 따라 LCD Backlight 램프는 길어지고 비선형 특성으로 인해 특성 표현이 곤란하여 회로 설계시 간략화된 등가 모델을 사용하게 되어 실제 인버터 제작과정에서 많은 시행착오를 거치게 한다. 회로 설계시 수식모델 적용을 위한 CCFL의 모델이 필요하며, 이러한 모델은 인버터를 효율적으로 설계할 수 있게 하므로서 설계에 필요한 시간과 자원 절감을 가능하게 한다. 본 논문에서는 42인치 LCD 구동인버터 설계에 필요한 CCFL의 수식 모델링을 IsSpice를 이용하여 구현하였으며, 회로 시뮬레이션과 실험을 통하여 모델의 타당성을 검증하였다.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.111-114
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• 2000

Single Electron Transistor Logic (SETL) can be characterized by HSPICE simulation using a SPICE macro model. First, One unit SET is characterized by Monte-carlo simulation and then we fit SPICE macro-modeling equations to its characteristics. Second, using this unit SET, we simulate the transient characteristics of two-input NAND gate in both the static and dynamic logic schemes. The dynamic logic scheme shows more stable operation in terms of logic-swing and on/off current ratio. Also, there is a merit that we can use the SET only as current on-off switch without considering the voltage gain.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.2
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• pp.43-45
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• 2000

In this study, present a method for extracting the BJT 1/f noise model parameters fabricated by BICMOS process. From the geometric analysis of the Kf, we show that Kf is in inverse proportion to emitter area. And it is extracting that $K=0.8\times10_{-20}, A_f=2, \alpha=1$ values.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.39-47
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• 1994

The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.391-392
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• 2008

A SPICE-based 3-dimensional circuit model of Light-Emitting Diode(LED) was modified include the reverse breakdown properties. The new model is found to be accurate to study the failure mechanisms of LEDs under electrostatic discharge (ESD) and electronic overstress (EOS). It was found that the permanent damages under heavy reverse stress is mainly due to the high electric field strength in P-GaN layer.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.141-145
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• 2021

The brightness of the Organic Light Emitting Diode (OLED) display is controlled by thin-film transistors (TFTs). Regardless of the materials and the structures of TFTs, an OLED suffers from the instable threshold voltage (V_th) of a TFT during operation. When designing an OLED pixel with circuit simulation tool such as SPICE, a designer needs to take V_th shift into account to improve the reliability of the circuit and various compensation methods have been proposed. In this paper, the effect of the compensation circuits from two typical OLED pixel circuits proposed in the literature are studied by the transient simulation with a SPICE tool in which the stretched-exponential time dependent V_th shift function is implemented. The simulation results show that the compensation circuits improve the reliability at the beginning of each frame, but V_th shifts from all TFTs in a pixel need to be considered to improve long-time reliability.