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http://dx.doi.org/10.4313/JKEM.2013.26.5.341

Simulation Method of Threshold Voltage Shift in Thin-film Transistors  

Jung, Taeho (Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.5, 2013 , pp. 341-346 More about this Journal
Abstract
Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.
Keywords
Threshold voltage shift; Modeling; SPICE;
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