Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Simulation Method of Threshold Voltage Shift in Thin-film Transistors

박막트랜지스터의 문턱전압 이동 시뮬레이션 방안

  • Jung, Taeho (Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology)
  • 정태호 (서울과학기술대학교 전자IT미디어공학과)
  • Received : 2013.04.21
  • Accepted : 2013.04.24
  • Published : 2013.05.01
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Abstract

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

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