• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.61-66
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• 2020

Threshold voltage shift occurring during operation is implemented in a SPICE simulation tool. Among the shift models the stretched-exponential function model, which is frequently observed from both single-crystal silicon and thin-film transistors regardless of the nature of causes, is selected, adapted to transient simulation, and added to BSIM4 developed by BSIM Research Group at the University of California, Berkeley. The adaptation method used in this research is to select degradation and recovery models based on the comparison between the gate and threshold voltages. The threshold voltage shift is extracted from SPICE transient simulation and shows the stretched-exponential time dependence for both degradation and recovery situations. The implementation method developed in this research is not limited to the stretched-exponential function model and BSIM model. The proposed method enables to perform transient simulation with threshold voltage shift in situ and will help to verify the reliability of a circuit.

• Herbal Formula Science
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• v.18 no.2
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• pp.15-23
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• 2010

The spice phenomenon therapy is to adhibit aromatic herbs or materials to the human body or clothing, for the purpose of preventing and treating diseases. Mankind found the fire, and found that some plants and trees give off smoke when they are burning. Then, they found that some of aromatic substances had certain actions after being absorbed through the respiratory organ, which was the beginning of the spice phenomenon therapy. The spice phenomenon therapy is effective to relieve the exterior syndrome, to eliminate dampness, to regulate Qi flow, and to induce resuscitation. It has two actions. One is that the aromas that permeated the body, refreshes the mind, stimulates the appetite, strengthens the spleen and the stomach, and makes a relaxing sleep. The other is that the aromatic substances, absorbed into the human body, have pharmacological actions. The volatile aromatic substances have various pharmacological actions such as stimulating cranial nerves, dilating cardiac blood vessels, promoting gastric secretion, relaxing and sleep-inducing. It has been proved that the spice phenomenon therapy is anti-inflammatory and anti-microbial and is effective to dilate cerebral blood vessels and to ease the pain. It is expected to be studied more aggressively.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.7-12
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• 2010

We have developed a SPICE compatible model of thermoelectric devices, and a parameter extracting technique only by electrical and temperature measurement by using Harman method was proposed. The proposed model and parameter extraction technique do not require experimental data from thermal conductivity measurements. The maximum error between extracted parameters extracted by proposed method and conventional method was about 14%, which is not a severe mismatch for real application. The proposed model is applicable to design of both for thermoelectric coolers and thermo electric generators.

• Journal of the Korea Safety Management & Science
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• v.7 no.4
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• pp.141-163
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• 2005

The international SPICE (Software Process Improvement and Capability determination) Project ISO/IEC 15504(SPICE : Software Process Improvement and Capability determination) is an emerging International Standard on SPA(Software Process Assessment). A prime motivation for developing this standard has been the perceived need for an internationally recognized software process assessment framework that pulls together the existing public and proprietary models and methods. A SPICE assessment can be considered as one of representative SPA model since assessors assign ratings to indicators and metrics to measure the capability of software process. But this models doesn't provide a systematic measurement procedures and dynamic method for SPI(Software Process Improvement). Through the evaluation of SPICE is capable of providing a substantiated basis for using the notion of capability, as well as providing information for nacessary improvements to the standard using 6sigma process. As a result, this paper propose a measurement procedure and guidelines for application of 6sigma process to guarantee the reliability in SPI and suggest the structure to support SPI on overall organization.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.455-458
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• 1994

This paper deals with the analysis of a DC servo motel speed control system with PI-controller using the SPICE, which was developed as n simulation program for electronic circuits. The system including PI-controller is needed to be modelled for SPICE analysis. The system is divided to motor part, power conversion part, and control part for effective simulations. The overall system is reconstructed by using the above models and the steady-state and transient state are analyzed through SPICE simulations. The simulation results are verified by comparing with the results obtained by conventional simulations.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.28B no.5
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• pp.411-420
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• 1991

In this paper, SPICE program which is widely used in analysis of general circuit on electronic and electrical field has been applied to DC-DC converter. We have selected Forward type which is widely used us SMPS(Switched Mode Power Supply) of various electronic equipments, and have confirmed the waveforms of circuit operation, transfer of energy and resetting in transformer. And the procedure which the output voltage of converter, including the control circuit, has been stabilized from the transient state to the steady state by controlling the duty ratio of switch is presented. We have compared SPICE simulation with experiment and have verified the validity of SPICE simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.8
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• pp.1465-1470
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• 2017

In conventional MOSFETs, the silicon thickness is always larger than inversion layer, so that the drain induced barrier lowering (DIBL) is expressed as a function of oxide thickness and channel length regardless of silicon thickness. However, since the silicon thickness is fully depleted in the sub-10 nm low doped double gate (DG) MOSFET, the conventional SPICE model for DIBL is no longer available. Therefore, we propose a novel DIBL SPICE model for DGMOSFETs. In order to analyze this, a thermionic emission and the tunneling current was obtained by the potential and WKB approximation. As a result, it was found that the DIBL was proportional to the sum of the top and bottom oxide thicknesses and the square of the silicon thickness, and inversely proportional to the third power of the channel length. Particularly, static feedback coefficient of SPICE parameter can be used between 1 and 2 as a reasonable parameter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.200-201
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• 2017

This paper introduces the SPICE simulation results of 3D sequential inverter considering electrical coupling. TCAD data and the SPICE data are compared to verify that the electrical coupling is well considered by using BSIM-IMG for the upper NMOS and LETI-UTSOI model for the lower PMOS. When inter layer dielectric is small, it is confirmed that electrical coupling is well reflected in the top transistor $I_{ds}-V_{gs}$ characteristics according to the change of the bottom transistor gate voltage.