• 대한전자공학회논문지SD
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• 제47권12호
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• pp.31-38
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• 2010

본 논문에서는 QVGA급 LCD Driver IC(LDI)의 그래픽 메모리를 설계한다. 저면적을 위해 pseudo-SRAM 구조로 설계하고, 센싱 특성 개선과 line-read 동작 시 구동력 향상을 위해 bit line을 분할한 cell array 구조를 적용한다. 또한, C-gate를 이용한 저면적의 충돌방지 회로를 사용하여 그래픽 메모리의 line-read/self-refresh 동작과 기존의 write/read 동작 상호간의 충돌을 효과적으로 제어하는 방식을 제안한다. QVGA급 LDI의 그래픽 메모리는 $0.18{\mu}m$ CMOS공정을 이용하여 트랜지스터 레벨로 설계하고 회로 시뮬레이션을 통해 그래픽 메모리의 write, read, line-read, self-refresh 등의 기본 동작을 확인하고, 제안된 충돌방지 블록에 대한 동작을 확인하였다. 개선된 cell array를 통해 bit/bitb line 전압차 ${\Delta}V$는 약 15% 증가하고, bit/bitb line의 charge sharing time $T_{CHGSH}$는 약 30% 감소하여 센싱 특성이 향상되었으며, line-read 동작 시 발생하는 전류는 약 40% 크게 감소되었다.

• 전기학회논문지
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• 제65권10호
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.195-197
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• 1998

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent a device induced the overvoltage above ratings by proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by control the slope of collector voltage under series connected IGBT turn-off transient. The propose gate control scheme limits the overvoltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• Journal of Power Electronics
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• 제14권2호
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• pp.292-301
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• 2014

This paper presents a new configuration for a three-phase multilevel voltage source inverter. The main bridge is built from a classical three-phase two-level inverter and three bidirectional switches. A variable DC-link employing two unequal DC voltage supplies and four switches is connected to the main circuit in such a way that the proposed inverter produces four levels in the output voltage waveform. In order to obtain the desired switching gate signals, the fundamental frequency staircase modulation technique is successfully implemented. Furthermore, the proposed structure is extended and compared with other types of multilevel inverter topologies. The comparison shows that the proposed inverter requires a smaller number of power components. For a given number of voltage steps N, the proposed inverter requires N/2 DC voltage supplies and N+12 switches connected with N+7 gate driver circuits, while diode clamped or flying capacitor inverters require N-1 DC voltage supplies and 6(N-1) switches connected with 6(N-1) gate driver circuits. A prototype of the introduced configuration has been manufactured and the obtained simulation and experimental results ensure the feasibility of the proposed topology and the validity of the implemented modulation technique.

• Journal of Power Electronics
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• 제16권2호
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• ETRI Journal
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• 제26권1호
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• pp.7-13
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• 2004

To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.

• Journal of Power Electronics
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• 제17권4호
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• pp.1117-1126
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• 2017

The main contribution of this paper is the use of sensorless active diodes to generate the gate signals for a three-phase boost-rectifier with a self-powered control scheme. The sensorless operation is achieved making use of the gate control signals generated by the active diode schemes on each of the switching devices using a pulse width half-controlled boost rectifier modulation technique (PWM-HCBR). The proposed scheme synchronizes the gate control signals with a three phase voltage supply. Autonomous operation is obtained making use of the output DC bus to feed the control circuitry, the active diodes and the driver circuitry. The three-phase boost-rectifier is supplied by a three-phase permanent magnet electric generator powered by a solar concentrator dish with variable voltage and variable frequency conditions. Experimental results report an efficiency of up to 94.6% for 25 W and an input of 3.6 V peak per phase with 450.

• 전력전자학회논문지
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• 제8권1호
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• pp.24-29
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• 2003

현재 120kV/70A 고압 스위치가 KSTAR의 NBI 시스템에 사용되기 위하여 대전의 원자력 연구소에 설치되어 있다. NBI 시스템은 아크 발생시 이온 소스를 보호하기 위하여 전압의 빠른 차단 및 빔 전류의 유시를 위하여 전압의 빠른 턴온이 요구된다. 따라서 고압 스위치와 아크 검출회로는 NBI 시스템에서 중요한 부분을 차지하고 있다. 고압의 반도체 스위치는 NBI 시스템 뿐만 아니라 산업전반에서 요구되고 있다. NBI 시스템에 적용된 120kV/70A 고압 스위치는 100개의 MOSFET 소자를 직렬연결하였으며 본 논문에서 제안한 바이어스 전원이 없는 간단한 구동회고를 사용하였다. 실험식에서의 시험 및 현장에서 100kW의 모의 저항부하와 NBI 이온 소스에 적용한 실험결과를 제시하였다. 본 논문은 120kV/70A 고압 MOSFET 스위치와 간단한 게이트 구동회로의 설계를 제시하였으며, 제작 및 시험기간 동안의 문제점 및 해결방안에 대해서도 제시하였다.

• 전기전자학회논문지
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• 제24권1호
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• pp.132-139
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• 2020

공기청정기에 사용되는 이오나이저 모듈은 권선형 transformer를 사용하여 방전전극인 HV+/HV-에 3.5KV/-4KV의 고전압을 공급하여 carbon fiber brush의 전계 방사에 의해 양이온과 음이온을 발생시킨다. 기존의 MCU를 이용한 이오나이저 모듈 회로는 PCB 사이즈가 크고 가격이 비싼 단점이 있고, 기존의 ring oscillator를 이용한 게이트 구동 칩은 oscillation 주기가 PVT(Process-Voltage-Temperature) 변동에 민감하고 HV+와 GND, HV-와 GND의 단락에 의한 fault detection 기능이 없으므로 화재나 감전의 위험이 있다. 그래서 본 논문에서는 7bit binary UP counter를 이용하여 PVT 변동이 있더라도 oscillation 주기를 조절하여 HV+ 전압이 목표 전압에 도달하게 한다. 그리고 HV+와 GND 사이의 단락을 검출하기 위한 HV+ short fault detection 회로, HV-와 GND 사이의 단락을 검출하기 위한 HV- short fault detection 회로와 HV+가 과전압 이상으로 올라가는 것을 검출하기 위한 OVP(Over-Voltage Protection) 회로를 새롭게 제안하였다.