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http://dx.doi.org/10.5370/KIEE.2016.65.10.1664

An Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure  

Chae, Hun-Gyu (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
Kim, Dong-Hee (Dept. of Electrical Engineering, Tongmyong University)
Kim, Min-Jung (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
Lee, Byoung Kuk (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.65, no.10, 2016 , pp. 1664-1671 More about this Journal
Abstract
This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.
Keywords
Gallium nitride high electronic mobility transistor (GaN HEMT); Gate driver; Parasitic component model; Half-Bridge converter;
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