An Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure |
Chae, Hun-Gyu
(Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
Kim, Dong-Hee (Dept. of Electrical Engineering, Tongmyong University) Kim, Min-Jung (Dept. of Electrical and Computer Engineering, Sungkyunkwan University) Lee, Byoung Kuk (Dept. of Electrical and Computer Engineering, Sungkyunkwan University) |
1 | J. Millan, "Survey of Wide Bandgap Power Semiconductor Devices," IEEE Trans. Power Electron. vol. 29, no. 5, pp. 2155-2163, 2014. DOI |
2 | N. Kminski, "State of the art and the future of wide band gap devices," in Power Electronics and Applications, 2009. EPE '09.13th European Conference on, pp. 1-9, 2009. |
3 | J. Wang, R. T. Li and H. S. Chung, "An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration," IEEE Trans. Power Electronics, vol. 27, no. 5, pp. 2657-2672, 2012. DOI |
4 | K. Peng, S. Eskandari, and E. Santi, "Analytical Loss Model for Power Converters with SiC MOSFET and SiC Schottky Diode Pair," in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), pp.6153-6160, 2015 |
5 | K.Wang, X. Yang. H.C Li, H. Ma, X. Zeng and W. Chen, "An Analytical switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation," IEEE Trans. Power Electron. vol. 31, no. 1, pp. 635-647, 2016. DOI |
6 | M. Rodriguez, A. Rodriguez, P. F. Miaja, D. G. Lamar and J. S. Zuniga, "An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model," IEEE Trans. Power Electronics, vol. 25, no. 6, pp. 1626-1640, 2010 DOI |
7 | M.Danilovic, Z. Chen, R. Wang and F. Luo, D. Borovevich, P. Mattavelli, "Evaluation of the Switching Characteristics of a Gallium-Nitride Transistor," in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2681-2688, 2011. |
8 | Texas Instruments, "High Speed PCB Layout Techniques," |
9 | D. Johan, J. Pierre, F. David, "Improvement of GaN Transistors Working Conditions To Increase Efficiency Of A 100W DC-DC Converter," in Proc IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 656-663, 2013. |
10 | J. Lautner and B. Piepenbreier, "Analysis of GaN HEMT Switching Behavior," 9th International Conference on Power Elecronics-ECCE Asia (ICPE-ECCE Asia 2015), pp. 567-574, 2015 |