• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.278-286
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• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.723-726
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• 1998

Fault dropping is a very important part of test generation process. It is used to reduce test generation time. Test generation systems use fault simulation for the purpose of fault dropping by identifying detectable faults with generated test patterns. Two kinds of delay fault model is used in practice, path delay fault model and gate delay fault model. In this paper we propose an efficient method for gate delay test generation which shares second test vector.

• ETRI Journal
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• 제32권4호
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• 한국환경과학회지
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• 제14권11호
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• pp.995-1004
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• 2005

As a research establish reservoir safety operation for small dam systems. This study presents hydrologic analysis conducted in the Duckdong and Bomun dam watershed based on various rainfall data and increase inflow. Especially the Duckdong dam without flood control feature are widely exposed to the risk of flooding, thus it is constructed emergency gate at present. In this study reservoir routing program was simulation for basin runoff estimating using HEC-HMS model, the model simulation the reservoir condition of emergency Sate with and without. At the reservoir analysis results is the Duckdong dam average storage decrease $20\%$ with emergency gate than without emergency gate. Also, the Bomun dam is not affected by the Duckdong flood control augmentation.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.649-654
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• 2014

In this paper, an analytical model for Surrounding Gate (SG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.655-661
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.585-593
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• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.

• 한국수자원학회논문집
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• 제38권3호
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• pp.189-198
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• 2005

본 연구에서는 조력발전소 배수갑문의 형상과 배치에 따른 방류능력을 해석하는데 3차원 수치모의가 효과적으로 이용될 수 있음을 보였다. 3차원 수치모형은 RANS를 지배방정식으로 하는 FLOW-3D 모형을 이용하였다. 본 연구결과 배수갑문의 방류능력은 물받이길이와 도류벽의 접근각도에 큰 영향을 받는 것으로 나타났다. 그리고 이의 개선 여부에 따라 $10\%$ 이상의 방류량 차이가 발생하였다. 또한 방류량은 배수문과 수차구조물을 연결하는 구조물의 형상과 물받이 끝 사면경사의 영향을 받는 것으로 나타났다. 본 연구에서는 배수갑문의 설계시 방류능력 개선을 위해서는 수리학적 검토가 필요하며, 수치모형실험이 수리모형실험과 더불어 유용한 해석도구로 이용될 수 있음을 보였다.

• Ecology and Resilient Infrastructure
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• 제7권4호
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• pp.300-307
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• 2020

본 연구는 다기능 보의 수문 운영 여부에 따라 수생 서식처의 변화를 파악하기 위하여 물리서식처 분석을 수행하였다. 대상 구간은 금강이며, 대상 어종은 피라미를 대상으로 하였다. 흐름 분석은 2차원 모형인 River2D 모형을 사용하였으며, 서식처 분석은 서식처 적합도 곡선을 이용하여 서식처의 양과 질을 산정하는 서식처 적합도 모형을 사용하였다. 수문 개방 여부에 따라 서식처의 변화를 살펴보기 위하여 수문 미개방과 부분개방에 대하여 설정하였다. 그 결과 수문을 부분개방하였을 때 현상태 대비 가중가용면적이 약 13배 향상되는 것으로 나타났다.