1 |
J. He, F. Liu, W. Bia, J. Feng, J. Zhang, and X. Zhang, "An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body", Semiconductor Science and Technology, Vol.22, No.6, pp.671-677, May 2007.
DOI
ScienceOn
|
2 |
A. Son, J. Kim, N. Jeong, J. Choi, and H. Shin, "Improved Explicit current-Voltage Model for Long- Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor", Journal of Applied Physics, Vol.48, pp.412-413, April 2009.
|
3 |
Y. Chen, and J. Luo, "A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model", International Conference on Modeling, Vol.1, 2001, pp.546-549.
|
4 |
D. Jimenez, and B. Inguiez, "Continuous analytic IV model for surrounding-gate MOSFETs", IEEE Electron Device Letters, Vol.25, No.8, pp. 571-573, Aug 2004.
DOI
ScienceOn
|
5 |
J-P. Colinge, "Multiple-gate SOI MOSFETs", Solid-State Electronics, Vol.48, No. 9-10, pp.897-905, May 2004.
DOI
ScienceOn
|
6 |
J. A. Lopez-Villanueva, P. Cartujo-Cassinello, F. Gamiz, J.Banqueri, A.J.Palma, "Effects of the inversion layer centroid on the performance of double gate MOSFETs", IEEE Transaction on Electron Devices, Vol. 47, No.1, pp. 141 - 146 , Jan 2000.
DOI
ScienceOn
|
7 |
J. A Lopez-Villanueva, P. Cartujo-Cassinello, J. Banqueri, F.Gamiz, S. Rodriguez, "Effects of the inversion layer centroid on MOSFET behavior", IEEE Transaction on Electron Devices, Vol. 44, No. 11, pp. 1915-1922, Nov 1997.
DOI
ScienceOn
|
8 |
N.Rodriguez, F.Gamiz, J.B.Roldan, "Modelling of the inversion layer centroid and polysilicon depletion effects on ultrathin gate oxide MOSFET behaviour: the influence of the crystallographic orientation", IEEE Transaction on Electron Devices, Vol.54, No.4, pp.723-731, Apr 2007.
DOI
ScienceOn
|
9 |
A.Schenk and G. Heiser, "Modeling and Simulation of tunneling through ultra-thin gate dielectrics", Journal of Applied Physics, Vol.81, No.12, pp.7900-7908, 1997.
DOI
ScienceOn
|
10 |
B.Govoreanu, P.Blomme, K. Henson, J.V. Houdt and K.D. Meyer, "An effective model for analyzing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers", Solid State Electronics, Vol. 48, No.4, pp. 617-625, Apr 2004.
DOI
ScienceOn
|
11 |
Yn.Yuan, Bo.Yu, Jooyoung Song and Yuan Taur, "An Analytical model for threshold voltage shift due to quantum confinment in surrounding gate MOSFETs with anisotropic effective mass", Solid-State Electronics, Vol.53, No.2, pp.140-144, Feb 2009.
DOI
ScienceOn
|
12 |
P. Vimala, and N.B. Balamurugan, "Modelling the centroid and charge density in double-gate MOSFETs including quatum effcets", International journal of Electronics, Vol.100, No. 9, pp. 1283-1295, Sep 2013.
DOI
|
13 |
Yu-Sheng Wu and Pin Su, "Analytical quantum - confinement model for short-channel Gate-All- Around MOSFETs Under Subthreshold Region", IEEE Transactions on Electron Devices, Vol.56, pp. 2720-2725, 2009.
DOI
ScienceOn
|
14 |
E.Moreno, J.B.Roldan, D.Barrera, A.Godoy, and F. Gamiz, "An Analytical Model for Square GAA MOSFETs including Quantum effects", Solid-State Electronics, Vol.54, No.11, pp.1463-1469, Nov 2010.
DOI
ScienceOn
|
15 |
J.B.Roldan, Andres Godoy, Francisco Gamiz and M. Balaguer, "Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs Including Quantum Effects", IEEE Transcations on Electron Devices, Vol.55, No.1, pp.411-416. Jan 2008.
DOI
ScienceOn
|
16 |
Benjamin Iniguez. David Jimenez. Jaume Roig. Hamdy, A. Hamid Lluis, F. Marsal, and Josep Pallares. "Explict continuous model for long-channel undoped surrounding gate MOSFETs", IEEE Transcations on Electron Devices, Vol. 44, No.8, pp. 1868-1873, Aug 2005.
|