• Tribology and Lubricants
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• 제35권5호
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Journal of Microbiology and Biotechnology
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• 제29권6호
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• pp.973-983
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• 2019

It is well known that iron is critical for bacterial growth and pathogenic virulence. Due to chemical similarity, $Ga^{3+}$ competes with $Fe^{3+}$ for binding to compounds that usually bind $Fe^{3+}$, thereby interfering with various essential biological reactions. In our present study, gallium(III) nitrate [$Ga(NO_3)_3$] could repress the growth of V. splendidus Vs without complete inhibition. In the presence of $Ga(NO_3)_3$, the secretion of homogentisic acid-melanin (HGA-melanin) in V. splendidus Vs cells could be increased by 4.8-fold, compared to that in the absence of $Ga(NO_3)_3$. HGA-melanin possessed the ability to reduce $Fe^{3+}$ to $Fe^{2+}$. In addition, HGA-melanin increased the mRNA levels of feoA and feoB, genes coding Fe2+ transport system proteins to 1.86- and 6.1-fold, respectively, and promoted bacterial growth to 139.2%. Similarly, the mRNA expression of feoA and feoB was upregulated 4.11-fold and 2.71-fold in the presence of $640{\mu}M$ $Ga(NO_3)_3$, respectively. In conclusion, our study suggested that although $Ga(NO_3)_3$ could interfere with the growth of V. splendidus Vs, it could also stimulate both the production of $Fe^{3+}$-reducing HGA-melanin and the expression of feoA and feoB, which facilitate $Fe^{2+}$ transport in V. splendidus Vs.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.73-79
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• 2022

본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa₂ 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa₂ IMC 그리고 하부에는 얇은 띠 형상의 Cu₉Ga₄ IMC가 형성되었다. CuGa₂ 입자들은 scallop 형상을 보이며 Cu₆Sn₅ 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa₂ 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.504-508
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• 2022

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.

• 한국염색가공학회지
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• 제34권3호
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• pp.207-216
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• 2022

Hydrogels have gained considerable attention in various fields due to their easily transformative ability by different stimulation. In addition, metal-based conductive additives can enable the hydrogels to be conductive with dimension change. Although the development of the additives offered enhanced electrical properties to the hydrogels, correspondingly enhanced mechanical properties may limit the volume and electrical properties switching after stimulation. Here we prepared poly(N-isopropylacrylamide) (PNIPAM) thermo-responsive hydrogel that has a 32℃ of low critical solution temperature and added liquid metal particles (LMPs) as conductive additives, possessing soft and stretchable benefits. The LMPs enabled PNIPAM (PNIPAM/LMPs) hydrogels to be constricted over 32℃ with a high volume switching ratio of 15.2 when deswelled. Once the LMPs are spontaneously oxidized in hydrogel culture, the LMPs can release gallium ions into the hydrogel nature. The released gallium ions and oxidized LMPs enhanced the modulus of the PNIPAM/LMPs hydrogel, triggering high mechanical stability during repeated swelling/deswelling behavior. Lastly, highly constricted PNIPAM/LMPs hydrogel provided a 5x10⁶ of electrical switching after deswelling, and the switching ratio was closely maintained after repeated swelling/deswelling transformation. This study opens up opportunities for hydrogel use requiring thermo-responsive and high electrical switching fields.

• 한국군사과학기술학회지
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• 제26권3호
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• pp.246-251
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• 2023

RADAR(Radio Detection and Ranging) is an important system for surveillance and reconnaissance by detecting a reflected signal which obtains the range from the radar to the target, and the velocity of the target. The magnitude of the reflected signal varies due to the radar cross section of the target, characteristic of the transmission and reception antenna, distance between the radar and the target, and power and wavelength of the transmitted signal. Thus, the RCS is the important characteristic of the target to determine if the target can be observed by the RADAR system. It is based on the material and shape of the target. We have measured the reflection signal of a simple square-shaped (20 × 20 cm) target made of a new material, a gallium-based liquid metal alloy and compared that of well-known metals including copper, aluminum. The magnitude of reflected signal of the aluminum target was the largest and it was 2.4 times larger than that of the liquid metal target. We also investigated the effect of the shape by measuring reflectance of the F-22 3D model(~1/95 ratio) target covered with/without copper, aluminium, and liquid metal. The largest magnitude of the reflected signal measured from side-view with the copper-covered F-22 model was 2.6 times greater than that of liquid metal. The reflectance study of the liquid metal would be helpful for liquid metal-based frequency selective surface or metamaterials.

• 한국진공학회지
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• 제16권5호
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• pp.359-365
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• 2007

본 논문에서는 zinc oxide (ZnO)와 gallium이 도핑 된 zinc oxide (GZO)를 이용하여 radio frequency (RF) magnetron sputtering 방법에 의해 상온에서 제작된 bottom-gate 박막 트랜지스터의 특성을 평가하고 분석하였다. 게이트 절연층 물질로서 새로운 물질을 사용하지 않고 열적 성장된 $SiO_2$를 사용하여 게이트 누설 전류를 수 pA 수준까지 줄일 수 있었다. ZnO와 GZO 박막의 표면 제곱평균제곱근은 각각 1.07 nm, 1.65 nm로 측정되었다. 그리고 ZnO 박막은 80% 이상, GZO 박막은 75% 이상의 투과도를 가지고 있었고, 박막의 두께에 따라 투과도가 달라졌다. 또한 두 시료 모두 (002) 방위로 잘 정렬된 wurtzite 구조를 가지고 있었다. 제작된 ZnO 박막 트랜지스터는 2.5 V의 문턱 전압, $0.027\;cm^2/(V{\cdot}s)$의 전계효과 이동도, 104의 on/off ratio, 1.7 V/decade의 gate voltage swing 값들을 가지고 있었고, enhancement 모드 특성을 가지고 있었다. 반면에 GZO 박막 트랜지스터의 경우에는 -3.4 V의 문턱 전압, $0.023\;cm^2/(V{\cdot}s)$의 전계효과 이동도, $2{\times}10^4$의 on/off ratio, 3.3 V/decade의 gate voltage swing 값들을 가지고 있었고, depletion 모드 특성을 가지고 있었다. 우리는 기존의 ZnO와 1wt%의 Ga이 도핑된 ZnO를 이용하여 두 가지 모드의 트랜지스터 특성을 보이는 박막 트랜지스터를 성공적으로 제작하고 분석하였다.

• Journal of Magnetics
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• 제11권1호
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• pp.5-7
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• 2006

The magnetotransport properties at room temperature of the 250-nm-thick MnAs(-1100) film grown on GaAs(001) substrate by molecular beam epitaxy was investigated. The results measured with various magnetic field directions were reported. They show the negative magnetoresistive effect for all field directions. The difference in the magnetoresistance curves for different field directions is in agreement with the magnetic anisotropy of the film.