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http://dx.doi.org/10.4313/JKEM.2022.35.5.13

Characterizations of Microscopic Defect Distribution on (-201) Ga2O3 Single Crystal Substrates  

Choi, Mee-Hi (Department of Materials Science and Engineering, Hanbat National University)
Shin, Yun-Ji (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Cho, Seong-Ho (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Jeong, Woon-Hyeon (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Jeong, Seong-Min (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Bae, Si-Young (Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.35, no.5, 2022 , pp. 504-508 More about this Journal
Abstract
Single crystal gallium oxide (Ga2O3) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga2O3 substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga2O3 substrates to get a basic standard prior to growing Ga2O3 crystals. Etch pit technique was employed to expose the type of defects on the Ga2O3 substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga2O3 single crystals.
Keywords
Gallium oxide; Defect; Etch pit; Topography; Edge-defined Film-fed growth;
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1 A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, and S. Yamakoshi, Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330E (SPIE, California, 2018), p. 9-14. [DOI: https://doi.org/10.1117/12.2301405]   DOI
2 Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. B. Anooz, A. Popp, U. Juda, I. M. Hanke, T. Schroeder, and M. Bickermann, Prog. Cryst. Growth Charact. Mater., 67, 100511 (2021). [DOI: https://doi.org/10.1016/j.pcrysgrow.2020.100511]   DOI
3 E. Ohba, T. Kobayashi, T. Taishi, and K. Hoshikawa, J. Cryst. Growth, 556, 125990 (2021). [DOI: https://doi.org/10.1016/j.jcrysgro.2020.125990]   DOI
4 J. D. Blevins, K. Stevens, A. Lindsey, G. Foundos, and L. Sande, IEEE Trans. Semicond. Manuf., 32, 466 (2019). [DOI: https://doi.org/10.1109/TSM.2019.2944526]   DOI
5 Z. Galazka, J. Appl. Phys., 131, 031103 (2022). [DOI: https://doi.org/10.1063/5.0076962]   DOI
6 T. S. Ngo, D. D. Le, J. Lee, S. K. Hong, J. S. Ha, W. S. Lee, and Y. B. Moon, J. Alloys Compd., 834, 155027 (2020). [DOI: https://doi.org/10.1016/j.jallcom.2020.155027]   DOI
7 O. Ueda, N. Ikenaga, K. Koshi, K. Iizuka, A. Kuramata, K. Hanada, T. Moribayashi, S. Yamakoshi, and M. Kasu, Jpn. J. Appl. Phys., 55, 1202BD (2016). [DOI: https://doi.org/10.7567/JJAP.55.1202BD]   DOI
8 K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu, Jpn. J. Appl. Phys., 55, 030303 (2016). [DOI: https://doi.org/10.7567/JJAP.55.030303]   DOI
9 Y. Yao, Y. Ishikawa, and Y. Sugawara, Phys. Status Solidi A, 217, 1900630 (2020). [DOI: https://doi.org/10.1002/pssa.201900630]   DOI
10 Y. Yao, Y. Sugawara, and Y. Ishikawa, J. Appl. Phys., 127, 205110 (2020). [DOI: https://doi.org/10.1063/5.0007229]   DOI
11 Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, and M. Bickermann, J. Cryst. Growth, 404, 184 (2014). [DOI: https://doi.org/10.1016/j.jcrysgro.2014.07.021]   DOI
12 K. Akaiwa, K. Kaneko, K. Ichino, and S. Fujita, Jpn. J. Appl. Phys., 55, 1202BA (2016). [DOI: https://doi.org/10.7567/JJAP.55.1202BA]   DOI
13 S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, Appl. Phys. Rev., 5, 011301 (2018). [DOI: https://doi.org/10.1063/1.5006941]   DOI
14 M. H. Wong, K. Goto, H. Murakami, Y. Kumagai, and M. Higashiwaki, IEEE Electron Device Lett., 40, 431 (2019). [DOI: https://doi.org/10.1109/LED.2018.2884542]   DOI
15 M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 103, 123511 (2013). [DOI: https://doi.org/10.1063/1.4821858]   DOI
16 M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]   DOI
17 X. Wang, M. Faizan, G. Na, X. He, Y. Fu, and L. Zhang, Adv. Electron. Mater., 6, 2000119 (2020). [DOI: https://doi.org/10.1002/aelm.202000119]   DOI
18 H. Y. Playford, A. C. Hannon, E. R. Barney, and R. I. Walton, Chem. Eur. J., 19, 2803 (2013). [DOI: https://doi.org/10.1002/chem.201203359]   DOI
19 S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, J. Phys. Chem. C, 117, 4194 (2013). [DOI: https://doi.org/10.1021/jp311300e]   DOI
20 K. Hoshikawa, T. Kobayashi, Y. Matsuki, E. Ohba, and T. Kobayashi, J. Cryst. Growth, 545, 125724 (2020). [DOI: https://doi.org/10.1016/j.jcrysgro.2020.125724]   DOI
21 M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett., 77, 4166 (2000). [DOI: https://doi.org/10.1063/1.1330559]   DOI
22 A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, and S. Yamakoshi, Jpn. J. Appl. Phys., 55, 1202A2 (2016). [DOI: http://doi.org/10.7567/JJAP.55.1202A2]   DOI
23 M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]   DOI
24 K. Hoshikawa, E. Ohba, T. Kobayashi, J. Yanagisawa, C. Miyagawa, and Y. Nakamura, J. Cryst. Growth, 447, 36 (2016). [DOI: https://doi.org/10.1016/j.jcrysgro.2016.04.022]   DOI
25 Z. Galazka, Semicond. Sci. Technol., 33, 113001 (2018). [DOI: https://doi.org/10.1088/1361-6641/aadf78]   DOI
26 E. G. Villora, K. Shimamura, Y. Yoshikawa, K. Aoki, and N. Ichinose, J. Cryst. Growth, 270, 420 (2004). [DOI: https://doi.org/10.1016/j.jcrysgro.2004.06.027]   DOI
27 H. Cui, H. F. Mohamed, C. Xia, Q. Sai, W. Zhou, H. Qi, J. Zhao, J. Si, and X. Ji, J. Alloys Compd., 788, 925 (2019). [DOI: https://doi.org/10.1016/j.jallcom.2019.02.076]   DOI
28 N. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima, and T. Shishido, Phys. Status Solidi C, 4, 2310 (2007). [DOI: https://doi.org/10.1002/pssc.200674884]   DOI