• Title/Summary/Keyword: Field-ring

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The Influence of the Substituents on the Benzo Ring for Antioxidant Activity of 4-Methyl-2H-benzopyran-2-one Analogues (4-Methyl-2H-benzopyran-2-one 유도체들의 항산화 활성에 관한 Benzo 고리상 치환기들의 영향)

  • Choi, Won-Seok;Lee, Jae-Whang;Cho, Yun-Gi;Sung, Nack-Do
    • Journal of Applied Biological Chemistry
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    • v.53 no.2
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    • pp.99-104
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    • 2010
  • The influences on antioxidant activities of the substituents ($R_1-R_4$) on benzo ring in 4-Methyl-2H-benzopyran-2-one analogues (1-23) were discussed quantitatively using three dimensional quantitative structure-activity relationships (3D-QSARs: Comparative molecular field analyses (CoMFA) and Comparative molecular similarity indice analyses (CoMSIA)) methods. The statistical qualities of CoMSIA models were better than those of CoMFA models and the CoMSIA 2 model was optimized model ($q^2$=0.700 & $r^2$=0.979). Also, the contribution ratios (%) of the optimized CoMSIA 2 model were H-bond donor field 43.5%, electrostatic field 41.8% and steric field 14.7% so that the antioxidant activity exhibited a strong correlation with H-bond donor and electrostatic factor of molecules. From the analytical results of the CoMSIA contour maps, if the positive charge favor group and H-bond donor disfavor group were placed in the $R_1-R_4$ positions on the benzo ring, it was predicted that the groups would raised the antioxidant activity.

3D-QSAR Analysis on the Insecticidal Activities of N-Substituents on Imidazol Ring in Imidacloprid Analogues (Imidacloprid 유도체 중 imidazol 고리상 N-치환체들의 살충활성에 대한 3D-QSAR 분석)

  • Soung, Min-Gyu;Kim, Se-Gon;Soog, Nack-Do
    • The Korean Journal of Pesticide Science
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    • v.11 no.3
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    • pp.131-137
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    • 2007
  • CoMFA and CoMSIA model were derived and reviewed on the insecticidal activities of N-substituents (X) on the imidazol ring in imidacloprid analogues at the different alignment condition. Regarding the predictability ($q^2$ or $r_{cv.}^2$) and fitness ($r_{ncv.}^2$) of the two optimized models, the atom based fit (A) alignments were better than that of the field fit (F) alignment and, on the other hand, CoMSIA (A10) model was better than CoMFA (A5) model. Also, from the most optimized CoMSIA (A10) model, the insecticidal activity by N-substituents (X) was dependence on the electrostatic field and H-bond acceptor field. It is predicted that, from the contour maps with optimized CoMSIA (A10) model, H-bond acceptors at ortho- and meta- position will contribute for improving of insecticidal activities and, as the functional groups of carbonyl oxygen atom are charged negatively and positively charged at the ortho- position of benzyl group, insecticidal activities will also be improved.

THE w-WEAK GLOBAL DIMENSION OF COMMUTATIVE RINGS

  • WANG, FANGGUI;QIAO, LEI
    • Bulletin of the Korean Mathematical Society
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    • v.52 no.4
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    • pp.1327-1338
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    • 2015
  • In this paper, we introduce and study the w-weak global dimension w-w.gl.dim(R) of a commutative ring R. As an application, it is shown that an integral domain R is a $Pr\ddot{u}fer$ v-multiplication domain if and only if w-w.gl.dim(R) ${\leq}1$. We also show that there is a large class of domains in which Hilbert's syzygy Theorem for the w-weak global dimension does not hold. Namely, we prove that if R is an integral domain (but not a field) for which the polynomial ring R[x] is w-coherent, then w-w.gl.dim(R[x]) = w-w.gl.dim(R).

A New Junction Termination Structure by Employing Trench and FLR (Trench와 FLR을 이용한 새로운 접합 마감 구조)

  • 하민우;오재근;최연익;한민구
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.6
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    • pp.257-260
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    • 2003
  • We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.

INJECTIVE COVERS OVER COMMUTATIVE NOETHERIAN RINGS OF GLOBAL DIMENSION AT MOST TWO II

  • KIM, HAE-SIK;SONG, YEONG-MOO
    • Communications of the Korean Mathematical Society
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    • v.20 no.3
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    • pp.437-442
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    • 2005
  • In studying injective covers, the modules C such that Hom(E, C) = 0 and $Ext^1$(E, C) = 0 for all injective module E play an important role because of Wakamatsu's lemma. If C is a module over the ring k[[x, y]] with k a field, the class of these modules C contains the class $\={D}$ of all direct summands of products of modules of finite length ([3, Theorem 2.9]). In this paper we show that every module over any commutative ring has a $\={D}$-preenvelope.

Acoustic radiation from resiliently mounted machinery in fluid loaded infinite cylindrical shell with periodic ring supports (보강 원통형 쉘에 탄성 지지된 기계류에 의한 수중 음향 방사)

  • Bae, Soo Ryong;Jung, Woo Jin
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2014.04a
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    • pp.644-649
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    • 2014
  • Analytical model is derived for the far-field acoustic radiation from machinery installed inside cylindrical shell. The analytical model includes the effect of fluid loading and interactions between periodic ring supports. Transmitted force from machine to a shell can be different by the impedance of shell. In this paper the transmitted force from machinery to a infinite shell through vibration isolator is considered by the impedance of shell. The effect of the shell impedance for acoustic radiation is investigated.

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GORENSTEIN DIMENSIONS OF UNBOUNDED COMPLEXES UNDER BASE CHANGE

  • Wu, Dejun
    • Bulletin of the Korean Mathematical Society
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    • v.53 no.3
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    • pp.779-791
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    • 2016
  • Transfer of homological properties under base change is a classical field of study. Let $R{\rightarrow}S$ be a ring homomorphism. The relations of Gorenstein projective (or Gorenstein injective) dimensions of unbounded complexes between $U{\otimes}^L_RX$(or $RHom_R(X,U)$) and X are considered, where X is an R-complex and U is an S-complex. In addition, some sufficient conditions are given under which the equalities $G-dim_S(U{\otimes}^L_RX)=G-dim_RX+pd_SU$ and $Gid_S(RHom_R(X,U))=G-dim_RX+id_SU$ hold.

PERFECT IDEALS OF GRADE THREE DEFINED BY SKEW-SYMMETRIZABLE MATRICES

  • Cho, Yong-Sung;Kang, Oh-Jin;Ko, Hyoung-June
    • Bulletin of the Korean Mathematical Society
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    • v.49 no.4
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    • pp.715-736
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    • 2012
  • Brown provided a structure theorem for a class of perfect ideals of grade 3 with type ${\lambda}$ > 0. We introduced a skew-symmetrizable matrix to describe a structure theorem for complete intersections of grade 4 in a Noetherian local ring. We construct a class of perfect ideals I of grade 3 with type 2 defined by a certain skew-symmetrizable matrix. We present the Hilbert function of the standard $k$-algebras R/I, where R is the polynomial ring $R=k[v_0,v_1,{\ldots},v_m]$ over a field $k$ with indeterminates $v_i$ and deg $v_i=1$.

THE GROUP OF GRAPH AUTOMORPHISMS OVER A MATRIX RING

  • Park, Sang-Won;Han, Jun-Cheol
    • Journal of the Korean Mathematical Society
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    • v.48 no.2
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    • pp.301-309
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    • 2011
  • Let R = $Mat_2(F)$ be the ring of all 2 by 2 matrices over a finite field F, X the set of all nonzero, nonunits of R and G the group of all units of R. After investigating some properties of orbits under the left (and right) regular action on X by G, we show that the graph automorphisms group of $\Gamma(R)$ (the zero-divisor graph of R) is isomorphic to the symmetric group $S_{|F|+1}$ of degree |F|+1.

TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process (Conventional CMOS 공정을 위한 GGNMOS Type의 ESD 보호소자의 TLP 특성 평가)

  • Lee, Tae-Il;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.875-880
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    • 2008
  • In this paper, we deal with the TLP evaluation results for GGNMOS in ESD protection device of conventional CMOS process. An evaluation parameter for GGNMOS is that repeatability evaluation for reference device($W/L=50\;{\mu}m1.0\;{\mu}m$) and following factors for design as gate width, number of finger, present or not for N+ gurad -ring, space of N-field region to contact and present or not for NLDD layer. The result of repeatability was showed uniformity of lower than 1 %. The result for design factor evaluation was ; 1) gate width leading to increase It2, 2) An increase o( finger number was raised current capability(It2), and 3) present of N+ gurad-ring was more effective than not them for current sink. Finally we suggest the optimized design conditions for GGNMOS in evaluated factor as ESD protection device of conventional CMOS process.