• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.

• Aerospace Engineering and Technology
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• v.10 no.1
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• pp.79-88
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• 2011

A fill-drain valve is operated by provided control gas at the ground for liquid propellant feeding system of space launch vehicle, which fills or drains on-board propellant tanks with a cryogenic oxidizer. We have analyzed and modified the data of fill-drain valve designed by Yuzhnoye. The simulation model of fill-drain valve is designed by using the AMESim code to predict and evaluate the dynamic characteristics and pneumatic behavior of valve. In this study, we performed a dynamic characteristic simulation on design parameter. And we could predict opening/closing time and pressures, operating performances on design parameters. This study will serve as one of reference guides to enhance the developmental efficiency of fill-drain valves with the various operating requirements, which shall be used in the Koreanized Space Launch Vehicle.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.116-119
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• 2015

Field-effect transistor (FET)-based ion or biosensors have been intensively studied so far. Among many measurement methods, the variation of the drain current can be induced when ions or biomolecules are interacted with sensing membranes located on the gate insulator of FET. One of typical FET-type sensors is an ion-sensitive field-effect transistor (ISFET) utilized in this study. In ISFET, the voltage is usually applied to the reference electrode instead of the gate voltage. Firstly, the voltage applied to the reference electrode versus the drain current was observed, and the steepest slope in this graph was found. Using this point, the optimized condition was established for the larger variation of the drain current in the saturated region in response to the variation of the input in the dynamic range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.585-593
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• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• Geomechanics and Engineering
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• v.34 no.6
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• pp.665-681
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• 2023

Liquefaction is one of the most devastating geotechnical phenomena that severely damage vital structures and lifelines. Before constructing structures on problematic ground, it is necessary to improve the site and solve the geotechnical problem. Among ground improvement methods dealing with liquefaction, gravel drain (GD) columns and deep soil mixing (DSM) columns are popular. In this study, the results of a series of seismic experiments in a 1g environment on a structure located over liquefiable ground with different thicknesses reinforced with GD and DSM techniques were presented. The dynamic response of the reinforced ground system was investigated based on the parameters of subsidence rate, excess pore water pressure ratio, and maximum acceleration. The time history of the input acceleration was applied harmonically with an acceleration range of 0.2g and at frequencies of 1, 2, and 3 Hz. The results show that the thickness of the liquefiable layer and the frequency of the input motion have a significant impact on the effectiveness of the improvement method and all responses. Among the two techniques used, DSM in thick liquefied layers was much more efficient than GD in controlling the subsidence and rupture of the soil under the foundation. Maximum settlement values, settlement rate, and foundation rotation in the thicker liquefied layer at the 1-Hz input frequency were higher than at other frequencies. At low thicknesses, the dynamic behavior of the GD was closer to that of the DSM.

• Journal of Korean Society of Rural Planning
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• v.30 no.2
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• pp.69-77
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• 2024

As impervious area increases due to urbanization, rainfall on the impervious area does not infiltrate into the ground, and stormwater drains quickly. Low impact development (LID) practices have been suggested as alternatives to infiltrate and store water in soil layers. The practices in South Korea is applied to urban development projects, urban renewal projects, urban regeneration projects, etc., it is required to perform literature research, watershed survey, soil quality, etc. for the LID practices implementation. Prior to the LID implementation at fields, there is a need to simulate its' effect on watershed hydrology, and Storm Water Management Model (SWMM) provides an opportunity to simulate LID practices. The LIDs applied in South Korea are infiltration-based practices, vegetation-based practices, rainwater-harvesting practices, etc. Vegetation-based practices includes bio-retention cell and rain garden, bio-retention cells are mostly employed in the model, adjusting the model parameters to simulate various practices. The bio-retention cell requires inputs regarding surface layer, soil layer, and drain layer, but the inputs for the drain layer are applied without sufficient examination, while the model parameters or inputs are somewhat influential to the practice effects. Thus, the approach to simulate vegetation-based LID practices in SWMM uses was explored and suggested for better LID simulation in South Korea.

• Journal of Korea Water Resources Association
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• v.45 no.6
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• pp.569-581
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• 2012

The levee is the facility which is constructed along with river for the protection of landside and for passage of water when there is a flood. When the seepage is exposed to the atmosphere on the landside surface of levee, it may eventually lead to levee failure. The seepage water may be removed from the landside surface by a properly designed drainage system. The purpose of the study is to show seepage control effect of a pervious toe drain, and to compare two drainage methods of a pervious toe drain. One is the pervious toe drain suggested by U.S. Army Corps of Engineers (USACE) and the other is that suggested by Japan Institute of Construction Engineering (JICE). The levee model constructed has the following dimension: the base width is 2.6 m; the crest width is 0.4 m; the side slope 1 : 2. The water depth in the riverside is 0.5 m. The shape of the toe drain by USACE is triangular. The shape of the toe drain by JICE is rectangular. They were installed with the base length of 0.4 m. The levee model without the toe drain showed saturation surface on the land side in the experiment but not with the toe drain. The experiment results was applied to a numerical analysis model using SEEP/W to calibrate and verify. The numerical analysis results for 35 cm and 30 cm drain width showed that the drain by JICE is a little bit safer than the drain by USACE. It is also easier to construct the toe drain by JICE. The results in the study would be applied to plan the seepage control for a levee with pervious toe drain.