References
- J. J. Gauter, et.al., 'optical effects on the static and dynamic characteristics of a GaAs MESFET,' IEEE Trans. MTT, vol.MTT-33, pp.819-822
- C. Baak, et.al, 'GaAs MESFET: A high speed optical detector,' Electron Lett., vol.13, p.139, 1977
- J. C. Gammel and J. M. Ballantyne, 'The OPFET: A new high-speed optical detector,' in Proc. IEDM, pp.120-123, 1978
- A. A. de Salles, 'Optical control of GaAs MESFET's,' IEEE Trans. MTT, vol. MTT-31, pp.812-820, 1983
- J. M. Osterwaller and B. J. Rickett, 'GaAs MESFET demodulates gigabit signal rates from GaAlAs injection laser,' Proc. IEEE, vol.67, pp.966-968, 1979 https://doi.org/10.1109/PROC.1979.11368
- B. B. Pal, et.al, 'Time dependent analysis of an ion implanted GaAs OPFET,' IEEE Trans. ED, Vol.42, No.4, pp.491-497, 1994
- J. Graffeuil, P. Rossel and H. Marinot, Electron Lett., vol.15, p.439, 1979
- J. L. Gautier, D. Pasquet and P. Pouvil, 'Optical effects on the static and dynamic characteristics of a GaAs MESFET,' IEEE Trans. MTT, vol. Mtt-33, pp.819-822, 1985
- H. Mizuno, 'Microwave characteristics of an optically-controlled GaAs MESFET,' IEEE MTT, vol. MTT-31, pp.596-600, 1983
- R. N. Simons and K. B. Bhasin, 'Analysis of optically controlled microwave/millimeter-wave device structure,' IEEE Trans MTT, vol. MTT-34, pp.1349-1355, 1986
- R. N. Simons, 'Microwave performance of an optically controlled AlGaAs high electron mobility transistor and GaAs MESFET,' IEEE MTT, vol. MTT-35, pp.1444-1455, 1987
- R. B. Darling and J. P. Uyemura, 'optical gain and large-signal characteristics of illuminated GaAs MESFETs,' IEEE J. Quantum Electron, vol. QE-23, pp.1160-1171, 1987
- S. Mishra, V. K. Singh and B. B. Pal, 'Effect of radiation and surface recombination on the characteristics of an ion implanted GaAs MESFETs,' IEEE Trans. ED, vol. 37, pp. 2-10, 1990 https://doi.org/10.1109/16.43794
- P. Chakrabarti, et.al, 'An improved model of an ion implanted GaAs OPFET,' IEEE Trans. Electron Devices., vol. 39, pp.2050-2059, 1992 https://doi.org/10.1109/16.155877
- Giovanni Breglio, et.al., 'Two silicon optical modulators realizable with a fully compatible bipolar process,' IEEE Journal of selected topics in Quantum Electronics, vol.4, pp. 1003-1010, 1998 https://doi.org/10.1109/2944.736098
- C.L. Schow, et.al., 'A 1-Gb/s monolithically integrated silicon NMOS optical receiver,' IEEE Journal of selected topics in Quantum Electronics, vol.4, pp. 1035-1039, 1998 https://doi.org/10.1109/2944.736109
- Kei Kanemoto, et. al., 'Dependence of ion implantation : Induced defects on substrate doping,' J. Appl. Phys. 89, pp.3156-3161, 2001 https://doi.org/10.1063/1.1337080
- K. L. Narayanan and M. Yamaguchi, 'Phosphorous ion implantation in C60 for the photovoltaic applications,' J. Appl. Phys., 89, pp.8331-8335, 2001 https://doi.org/10.1063/1.1374481
- G. W. Taylor, H. M. Darley, R. C. Frye and P. K. Chatterjee, 'A Device Model for an Ion-Implanted MESFET,' IEEE Transaction Electron Devices Vol. ED-26, No.3, 1979
- S. M. Sze, 'Physics of Semiconductor Devices, 2nd ed. ,' John Wiley & Sons, New York, 1981
- S. K. Ghandhi, 'VLSI fabrication principle of Si and GaAs,' John Wiley & Sons, New York, 1983
- Hojin Ryu, Jinmo Kang, et.al, 'Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays,' Journal of Electronic Materials, Vol.32, No.9, p.919, 2003 https://doi.org/10.1007/s11664-003-0223-y
- P. Chakraborti, S. K. Shrestha, et.al., 'Switching characteristics of an optically controlled GaAs- MESFET,' IEEE Trans. Electron Devices, Vol.42, No.3, pp.365-375, 1994 https://doi.org/10.1109/16.370053
- B. B. Pal and S. N. Chattopadhyay, 'GaAs OPFET characteristics considering the effect of gate depletion with modulation due incident radiation,' IEEE Trans. Electron Devices, Vol.39, No.5, p.1021-1027, 1992 https://doi.org/10.1109/16.129077
- S. N. Chattopadhyay and B. B. Pal, 'Analytical modeling of an ion implanted silicon MESFET in post-anneal condition,' IEEE Trans. Electron Devices, Vol.36, No.1, pp.81-87, 1989 https://doi.org/10.1109/16.21182
- M. S. Shur, 'Analytical model of GaAS MESFET,' IEEE Trans. Electron Devices, vol.25, pp.612-618, 1978 https://doi.org/10.1109/T-ED.1978.19145
- Michael Shur, 'GaAs devices and circuits,' Plenum Press, New York, 1989
- T. Takada, K. Yokoyama, et.al., 'A MESFET variable capacitance model for GAAs integrated circuit simulation,' IEEE Trans. Microwave Theory Tech., Vol.MTT-30, No.5, pp.719-724, 1982
- S. N. Chattopadhyay and B. B. Pal, 'The effects of annealing on the switching characteristics of an ion implanted silicon MESFET,' IEEE Trans. Electron Devices, Vol.36, No.5, pp.920-929, 1988 https://doi.org/10.1109/16.299674
- M.S. Shur and L. F. Eastman, 'Current-voltage characteristics, small-signal parameters, switching times and power–delay products of GaAs MESFETs,' in IEEE MTT-S Int. Microwave Symp. Dig., 1978, pp.150-152
- Shiyang Tian, et.al. 'A detailed physical model for ion implant induced damage in silicon,' IEEE Trans. Electron Devices, vol.45, pp.1226-1238, 1998 https://doi.org/10.1109/16.678523