• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.274-280
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• 2000

This paper deals with an experimental study to apply commercial semiconductors to measure radiation dose rate for gamma ray. Since the low cost, small size, high efficiency and ruggedness of silicon photodiodes make them attractive photodetectors, they coulde be effectively used in measuring any radiation such as gamma ray. Most PN photodiodes show that the reverse current increases when the light is increased. Therefore the depletion region of them have influence on the reverse current, so we choose silicon PIN photodiodes with large depletion region. In order to detect radiation dose rate and then, to apply in developing any gamma ray dosimeter, some examinations and experiments were performed to PIN photodiodes in this work. Two kinds of PIN photodiodes, such as NEC's PH302 and SIEMENS's BPW34, were tested in a Co-60 gamma irradiation facility with a semiconductor parameter analyzer. As a result, we found that such PIN photodiodes present good linearity in diode current characteristics with dose rate. Therefore silicon PIN photodiodes could be suitably used in designing gamma ray dosimeters.

• Journal of Powder Materials
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• v.28 no.2
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• pp.110-119
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• 2021

In this study, the high-temperature oxidation properties of austenitic 316L stainless steel manufactured by laser powder bed fusion (LPBF) is investigated and compared with conventional 316L manufactured by hot rolling (HR). The initial microstructure of LPBF-SS316L exhibits a molten pool ~100 ㎛ in size and grains grown along the building direction. Isotropic grains (~35 ㎛) are detected in the HR-SS316L. In high-temperature oxidation tests performed at 700℃ and 900℃, LPBF-SS316L demonstrates slightly superior high-temperature oxidation resistance compared to HR-SS316L. After the initial oxidation at 700℃, shown as an increase in weight, almost no further oxidation is observed for both materials. At 900℃, the oxidation weight displays a parabolic trend and both materials exhibit similar behavior. However, at 1100℃, LPBF-SS316L oxidizes in a parabolic manner, but HR-SS316L shows a breakaway oxidation behavior. The oxide layers of LPBF-SS316L and HR-SS316L are mainly composed of Cr₂O₃, Fe-based oxides, and spinel phases. In LPBF-SS316L, a uniform Cr depletion region is observed, whereas a Cr depletion region appears at the grain boundary in HR-SS316L. It is evident from the results that the microstructure and the high-temperature oxidation characteristics and behavior are related.

• ETRI Journal
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• v.36 no.5
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• pp.829-834
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• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.32-35
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• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.484-489
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• 1986

A device with variable stepped oxide layer along the edge region of Schottky junction have been designed and fabricated. The effect of this stepped oxide layer in the edge region improves the breakdown voltage as a result of the by increase of the depletion layer width, and decreases the leakage current as compared to the effect of conventional field oxide layer, when the reverse voltage was applied. Experimental results shown that the Schottky diode with the the reverse voltage was applied. Experimenal results show that the Schottky diode with the optimal stepped oxide layer maintains nearly ideal I-V characteristics and excellent breakdown voltage(170V) by reducing the edge effect inherent in metal-semiconductor contacts. The optimal conditions of stepped oxide layer are 1700\ulcornerin thickness and 10\ulcorner in length.

• Journal of The Korean Astronomical Society
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• v.38 no.2
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• pp.279-282
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• 2005

We report the millimeter-wave radio observations of molecular cloud cores in Taurus. The observed line is the $N_2H^+$ emission at 93 GHz, which is known to be less affected by molecular depletion. We have compared starless (IRAS-less) cores with star-forming cores. We found that there is no large difference between starless and star-forming cores, in core radius, linewidth, core mass, and radial intensity profile. Our result is in contrast with the result obtained by using a popular molecular line, in which starless cores are larger and less condensed. We suggest that different results mainly come from whether the employed molecular line is affected by depletion or not. We made a virial analysis, and found that both starless and star-forming cores are not far from the critical equilibrium state, in Taurus. Together with the fact that Taurus cores are almost thermally supported, we conclude that starless Taurus cores evolve to star formation without dissipating turbulence. The critical equilibrium state in the virial analysis corresponds to the critical Bonnor-Ebert sphere in the Bonnor-Ebert analysis (Nakano 1998). It is suggested that the initial condition of the molecular cloud cores/globules for star formation is close to the critical equilibrium state/critical Bonnor-Ebert sphere, in the low-mass star forming region.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.2
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• pp.184-191
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• 1993

Continuous-time integrated filters, implemented in MOS VLSI technology, have been receiving considerable attention. In this paper, a continuous-time fifth order elliptic low-pass MOSFET-C filter has been designed with a cutoff frequency 3,400Hz. First an active RC filter is designed using cascade method which each block can be tunable. And then the resistors of an active RC network are replaced by a linear resistor using NMOS depletion transistors operated in the triode region. This continuous-time MOSFET filter have simpler structure than switched-capacitor filter, so reduce the chip area. The designed MOSFET-C filter characteristics are simulated by PSPICE program.