Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Schottky Diode of Optimal Stepped Oxide Layer for High Breakdown Voltage

높은 항복전압을 위한 최적 계단산화막의 쇼트키 다이오드

  • Lee, Yong Jae (Dept. of Elec. Eng., Yon Sei Univ.) ;
  • Lee, Moon Key (Dept. of Elec. Eng., Yon Sei Univ.) ;
  • Kim, Bong Ryul (Dept. of Elec. Eng., Yon Sei Univ.)
  • 이용재 (연세대학교 전자공학과) ;
  • 이문기 (연세대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1986.04.01
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Abstract

A device with variable stepped oxide layer along the edge region of Schottky junction have been designed and fabricated. The effect of this stepped oxide layer in the edge region improves the breakdown voltage as a result of the by increase of the depletion layer width, and decreases the leakage current as compared to the effect of conventional field oxide layer, when the reverse voltage was applied. Experimental results shown that the Schottky diode with the the reverse voltage was applied. Experimenal results show that the Schottky diode with the optimal stepped oxide layer maintains nearly ideal I-V characteristics and excellent breakdown voltage(170V) by reducing the edge effect inherent in metal-semiconductor contacts. The optimal conditions of stepped oxide layer are 1700\ulcornerin thickness and 10\ulcorner in length.

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