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Transistor Characteristics by the Effect of Leakage Current Cutoff of Schottky Contact  

Oh, Teresa (Division of Semiconductor, Choengju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.2, 2018 , pp. 32-35 More about this Journal
Abstract
The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V
Keywords
Schottky Contact; Juinction; ZTO; SiOC; Capacitance;
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Times Cited By KSCI : 2  (Citation Analysis)
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