• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.31-39
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• 2004

This paper illustrates the noise characteristics under chip's core operations according to types of packages and modules for DDR DRAM For analyzing this, the impedance profiles and power noises are analyzed with DRAM chips having commercial TSOP package and commercial FBGA package on TSOP-based DIMM and FBGA-based DIMH In controversy with common concepts, we find that the noise-isolation characteristics of FBGA package are more weak and sensitive on transferred noises than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.433-434
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• 2007

This paper describes a low-voltage dynamic random-access memory (DRAM) focusing on subthreshold leakage reduction during self-refresh (sleep) mode. By sharing a power switch, multiple iterative circuits such as row and column decoders have a significantly reduced subthreshold leakage current. To reduce the leakage current of complex logic gates, dual channel length scheme and input vector control method are used. Because all node voltages during the standby mode are deterministic, zigzag super-cutoff CMOS is used, allowing to Preserve internal data. MTCMOS technique Is also used in the circuits having no need to preserve internal data. Sub-1.2-V 1-Gb mobile DDR DRAM employing all these low-power techniques was designed in a 60 nm CMOS technology and achieved over 77% reduction of overall leakage current during the self-refresh mode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.29-34
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• 2005

This paper describes a novel internal clock generator, called duty cycle-corrected analog synchronous mirror delay (DCC-ASMD). The proposed circuit is well suited for dual edge-triggered systems such as double data-rate synchronous DRAM since it can achieve clock synchronization within two clock cycles with accurate duty cycle correction. To evaluate the performance of the proposed circuit, DCC-ASMD was designed using a $0.35\mu$m CMOS process technology. Simulation results show that the proposed circuit generates an internal clock having $50\%$ duty ratio within two clock cycles from the external clock having duty ratio range of $40\;\~\;60$.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2014.06a
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• pp.163-165
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• 2014

In this paper, we propose a world's first programmable video processing platform for video quality enhancement of 8K ($7680{\times}4320$) UHD (Ultra High Definition) TV at 60 frames per second. To support huge computation and memory bandwidth of video quality enhancement for 8K resolution, the proposed platform has unique features like symmetric multi-cluster architecture for data partitioning, ring data-path between clusters to support data pipelining, on-the-fly processing architecture to reduce DDR bandwidth, flexible hardware to accelerating common kernel in video enhancement algorithms. In addition to those features, general programmability of SRP (Samsung reconfigurable processor) as main core of the proposed platform makes it possible to upgrade continuously video enhancement algorithm even after the platform is fixed. This ability is very important because algorithms for 8K DTV is under development. The proposed sub-system has been embedded into SoC (System on Chip) and new 8K UHD TV using the programmable SoC is expected at CES2015 for the first time in the world.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.251-258
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• 2012

Recently, NAND Flash memory structure is evolving from SDR (Single Data Rate) to high speed DDR(Double Data Rate) to fulfill the high performance requirement of SSD and SSS. Accordingly, the proper ways of transferring data that latches valid data stably and minimizing data skew between pins by using PHY(Physical layer) circuit techniques have became new issues. Also, rapid growth of speed in NAND flash increases the operating frequency and power consumption of NAND flash controller. Internal voltage variation margin of NAND flash controller will be narrowed through the smaller geometry and lower internal operating voltage below 1.5V. Therefore, the increase of power budge deviation limits the normal operation range of internal circuit. Affection of OCV(On Chip Variation) deteriorates the voltage variation problem and thus causes internal logic errors. In this case, it is too hard to debug, because it is not functional faults. In this paper, we propose new architecture that maintains the valid timing window in cost effective way under sudden power fluctuation cases. Simulation results show that the proposed technique minimizes the data skew by 379% with reduced area by 20% compared to using PHY circuits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1107-1114
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• 2004

System Packet Interface Level 4 Phase 2(SPI-4.2) is an interface for packet and cell transfer between a physical layer(PHY) device and a link layer device, for aggregate bandwidths of OC-192 ATM and Packet Over Sonet/SDH(POS), as well as 10Gbps Ethernet applications. SPI-4.2 core consists of Tx and Rx modules and supports full duplex communication. Tx module of SPI-4.2 core writes 64-bit data word and 14-bit header information from the user interface into asynchronous FIFO and transmits DDR(Double Data Rate) data over PL4 interface. Rx module of SPI-4.2 core operates in vice versa. Tx and Rx modules of SPI-4.2 core are designed to support maximum 256-channel and control the bandwidth allocation by configuring the calendar memory. Automatic DIP4 and DIP-2 parity generation and checking are implemented within the designed core. The designed core uses Xilinx ISE 5.li tool and is described in VHDL Language and is simulated by Model_SIM 5.6a. The designed core operates at 720Mbps data rate per line, which provides an aggregate bandwidth of 11.52Gbps. SPI-4.2 interface core is suited for line cards in gigabit/terabit routers, and optical cross-connect switches, and SONET/SDH-based transmission systems.