• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.695-702
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• 2015

A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and $620{\times}340{\mu}m^2$, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1151-1153
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• 1999

3-layer polysilicon 표면미세가공공정을 이용하여 micro zone plate 렌즈와 미러 및 이를 구동하기 위한 구동기를 일체화시킨 마이크로 구동형 광학소자를 설계, 제작하였다. 650nm의 파장대역에서 초점거리가 $500{\mu}m$가 되도록 마이크로 zone plate 렌즈를 설계하였으며, 렌즈의 광학축은 실리콘 기판 상에서 $121{\mu}m$거리에 위치하도록 제작하였다. 마이크로 hinge와 스프링 latch 및 측면지지 plate를 이용하여 마이크로 렌즈와 미러가 실리콘 기판상에서 out-of-plane동작이 가능하도록 하였다. 마이크로렌즈 초점거리의 가변을 위하여 6개의 SDA(Scratch Drive Actuator)어레이를 설계, 제작하였다. 또한 빔 반사를 위한 마이크로 미러를 설계하고 $45^{\circ}$ self-assembly를 위하여 마이크로 hinge와 SDA array를 제작하였다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.932-934
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• 1999

In this paper, the new IGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The simulations are used in order to investigate the effects of the position, width and concentration of trap injection region using 2D device simulator MEDICI. And, their electrical characteristics are analyze and the optimum design parameters are extracted. As a result of simulation, the turn off time for the proposed LIGBT model A by the trap injection is $0.78{\mu}s$. And, the latch up voltage is 3.4V and forward blocking voltage is 168V which are superior to that of conventional structure. In addition, the proposed model is achieved more efficient in switching time and process effort. Therefore, It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3335-3343
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• 2021

The impact of gamma radiation on a commercial off the shelf microcontroller board has been investigated. Three different tests have been performed to ascertain the radiation tolerance of the device from a nuclear decommissioning deployment perspective. The first test analyses the effect of radiation on the output voltage of the on-board voltage regulator during irradiation. The second test evaluated the effect of gamma radiation on the voltage characteristics of analogue and digital inputs and outputs. The final test analyses the functionality of the microcontroller when using an external, shielded voltage regulator instead of the on-board voltage regulator. The results suggest that a series of latch-ups occurs in the microcontroller during irradiation, causing increased current drain which can damage the voltage regulator if it does not have short-circuit protection. The analogue to digital conversion functionality appears to be more sensitive to gamma radiation than digital and analogue output functionality. Using an external, shielded voltage regulator can prove beneficial when used for certain applications. The collected data suggests that detaching the voltage regulator can extend the lifespan of the platform up to approximately 350 Gy.

• The Journal of the Acoustical Society of Korea
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• v.18 no.2
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• pp.53-60
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• 1999

In this paper, it is proposed to a new architecture of CMOS IADC(Current-Mode Analog-to-Digital Converter) using 1.5-bit bit cell of which consists a CSH(Current-Mode Sample-and-Hold) and CCMP(Current-Mode Comparator). In order to guarantee the entire linearity of IADC, the CSH is designed to cancel CFT(Clock Feedthrough) whose resolution is to meet at the least 9-bit which is placed in the front-end of each bit cell. In the proposed IADC, digital correction logic is simplified and power consumption is reduced because bit cell of each stage needs two latch CCMP. Also, it is available for a mixed-mode integrated circuit because all of block is designed with only MOS transistor. With the HYUNDAI 0.8㎛ CMOS parameter, the HSPICE simulation results show that the proposed IADC can be operated at 20Ms/s with SNR of 43 dB with which is satisfied 7-bit resolution for input signal at 100 ㎑, and its power consumption is 27㎽.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.198-204
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• 2001

In this paper, a 3V 8-bit 200MSPS CMOS folding / interpolation A/D Converter is proposed. It employs an efficient architecture whose FR(Folding Rate) is 8, NFB(Number of Folding Block) is 4, and IR (Interpolating Rate) is 8. For the purpose of improved SNDR by to be low input frequency, distributed track and hold circuits are included. In order to obtain a high speed and low power operation, further, a novel dynamic latch and digital encoder based on a novel delay error correction are proposed. The chip has been fabricated with a 0.35${\mu}{\textrm}{m}$ 2-poly 3-metal n-well CMOS technology. The effective chip area is 1070${\mu}{\textrm}{m}$$\times$650${\mu}{\textrm}{m}$ and it dissipates about 230mW at 3.3V power supply. The INL is within $\pm$1LSB and DNL is within $\pm$1LSB, respectively. The SNDR is about 43㏈, when the input frequency is 10MHz at 200MHz clock frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.72-78
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• 2009

This paper proposes a low phase noise ring voltage controlled oscillator(VCO) with a standard $0.13{\mu}m$ CMOS process for PLL circuit using the VCO-gain-controlled Delay cell. The proposed Delay cell architecture with a active resistor using a MOS transistor. This method can reduced a VCO gain so that improve phase noise. And, Delay cell consist of Wide-Swing Cascode current mirror, Positive Latch and Symmetric load for low phase noise. The measurement results demonstrate that the phase noise is -119dBc/Hz at 1MHz offset from 1.9GHz. The VCO gain and power dissipation are 440MHz/V and 9mW, respectively.

• The Transactions of the Korea Information Processing Society
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• v.7 no.1
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• pp.235-244
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• 2000

This paper presents a low power PLL based clock geneator circuit for microprocessors. It generates 32MHz${\sim}$1GHz clocks and can be integrated inside microprocessor chips. A high speed D Flip-Flop is designed using dynamic differential latch and a new Phase Frequency Detector(PFD) based on this FF is presented. The PFD enjoys low error characteristics in phase sensitivity and the PLL using this PFD has a low phase error. To improve the linearity of voltage controlled oscillator(VCO) in PLL, the voltage to current converter and current controlled oscillator combination is suggested. The resulting PLL provides wide lock range and extends frequency of generated clocks over 1 GHz. The clock generator is designed by using $0.65\;{\mu}m$ CMOS full custom technology and operates with $11\;{\mu}s$ lock-in time. The power consumption is less than 20mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.8
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• pp.1877-1886
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• 2010

In this paper, we design a redundancy control circuit for 1T-SRAM repair using electrical fuse programming. We propose a dual port eFuse cell to provide high program power to the eFuse and to reduce the read current of the cell by using an external program supply voltage when the supply power is low. The proposed dual port eFuse cell is designed to store its programmed datum into a D-latch automatically in the power-on read mode. The layout area of an address comparison circuit which compares a memory repair address with a memory access address is reduced approximately 19% by using dynamic pseudo NMOS logic instead of CMOS logic. Also, the layout size of the designed redundancy control circuit for 1T-SRAM repair using electrical fuse programming with Dongbu HiTek's $0.11{\mu}m$ mixed signal process is $249.02 {\times}225.04{\mu}m^{2}$.