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Chen, W. Y. : 'Overview of On-Chip Electrostatic Discharge protection design with SCR-Based devices in CMOS Integrated Circuits', IEEE Transactions on Device and Materials Reliability, 2005, 5, (2), pp. 235-249
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Jang, S. L., and Li, S. H. : 'MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits', Solid State Electronics, 2001, 45, pp. 1799-1803
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Ker, M. D., and Hsu, K. C. : 'Substrate-Triggered SCR device for On-Chip ESD protection in fully silicided Sub-0.25- CMOS process', IEEE Transactions on Electron Devices, 2003, 50 (2), pp. 397-405
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Zhou, A. C., Wang, Y., and Jin, X. L. : 'Impact of Layout Skill to Improve ESD Holding Voltage of SCR Embeded Diode Structure', Proc. Int. Conf. on EIEE, Changsha, China, June 2012, Vol. 1, pp. 220-223
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Chen, W. Y., Ker, M. D., and Jou , Y. N. : 'Source- Side engineering to increase holding voltage of LDMOS in a 16V BCD technology to avoid latch-up failure', Proc. Int. Conf. on IPFA, China, June 2009, Vol. 1, pp. 220-223
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Yang, L., Wang, Y., Zhou, A., and Jin, X. L. : 'Design, fabrication and test of novel LDMOSSCR for improving holding voltage', Solid-State Electronics, 2015, 103 (2015), pp. 122-126.
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Ma, F., Zhang, B., Han, Y., Zheng, J., Song, B., Dong, S., Liang, H. : 'High Holding Voltage SCRLDMOS Stacking Structure With Ring-Resistance- Triggered Technique', IEEE Electron Device Letters, 2013, 34(9), pp. 1178-1180
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Liu, Z. W., Liu, J. J., and Vinson, J. E : 'Silicon- Controlled Rectifier (SCR) device for high-voltage electrostatic discharge (ESD) applications', US Patent 0212323 Al, August. 27, 2009
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Ryu, J. Y. , Kang, T. K.,and Shiheung , M. K.: 'Stacked SCR with high holding voltage', US Patent 7773356 B2, August. 10, 2010
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Ko, J. H., Kim, H. G., Jeon, J. S. : 'Gate bounded diode triggered high holding voltage SCR clamp for on-chip ESD protection in HV ICs', IEEE 35th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013, pp. 1-8
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Dong, S. R., Jin, H., Miao, M., Wu, J., Liou, J. J. : 'Novel capacitance coupling complementary dualdirection SCR for high-voltage ESD', IEEE Electron Device Lett, 2012, 33, (5), pp.640-642
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