• Title/Summary/Keyword: Conduction Path Length

Search Result 20, Processing Time 0.026 seconds

Dependence of Conduction Path for Device Parameter of DGMOSFET Using Series (급수를 이용한 DGMOSFET에서 소자 파라미터에 대한 전도중심 의존성)

  • Han, Jihyung;Jung, Hakkee;Jeong, Dongsoo;Lee, Jongin;Kwon, Ohshin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2012.10a
    • /
    • pp.835-837
    • /
    • 2012
  • In this paper, we have been analyzed conduction path by device parameter of double gate(DG) structure that have top gate and bottom gate. The Possion equation is used to analytical. The change of conduction path have been investigated for various channel lengths, channel thickness and gate oxide thickness using this model, given that these parameters are very important in design of DGMOSFET. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

  • PDF

Relation between Conduction Path and Breakdown Voltages of Double Gate MOSFET (DGMOSFET의 전도중심과 항복전압의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.17 no.4
    • /
    • pp.917-921
    • /
    • 2013
  • This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

Analysis of Conduction-Path Dependent Off-Current for Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 차단전류에 대한 전도중심 의존성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.19 no.3
    • /
    • pp.575-580
    • /
    • 2015
  • Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

Analysis of Subthreshold Swing for Ratio of Channel Length and Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 채널길이와 두께 비에 따른 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.19 no.3
    • /
    • pp.581-586
    • /
    • 2015
  • This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

Parameter dependent conduction path for nano structure double gate MOSFET (나노구조 이중게이트 MOSFET에서 전도중심의 파라미터 의존성)

  • Jeong Hak-Gi;Lee Jae-Hyeong;Lee Jong-In
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2006.05a
    • /
    • pp.861-864
    • /
    • 2006
  • In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

  • PDF

Parameter dependent conduction path for nano structure double gate MOSFET (나노구조 이중게이트 MOSFET에서 전도중심의 파라미터 의존성)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.12 no.3
    • /
    • pp.541-546
    • /
    • 2008
  • In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

Conduction Path Dependent Threshold Voltage for the Ratio of Top and Bottom Oxide Thickness of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 상하단 산화막 두께비에 따른 전도중심에 대한 문턱전압 의존성)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.11
    • /
    • pp.2709-2714
    • /
    • 2014
  • This paper has analyzed the change of threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factor to be able to control the current in the subthreshold region increases. The analytical potential distribution is derived from Poisson's equation to analyze the threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness. The Gaussian distribution function is used as charge distribution. This analytical potential distribution is used to derive off-current and subthreshold swing. By observing the results of threshold voltage and conduction path with parameters of bottom gate voltage, channel length and thickness, projected range and standard projected deviation, the threshold voltage greatly changed for the ratio of top and bottom gate oxide thickness. The threshold voltage changed for the ratio of channel length and thickness, not the absolute values of those, and it increased when conduction path moved toward top gate. The threshold voltage and conduction path changed more greatly for projected range than standard projected deviation.

Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.8
    • /
    • pp.1925-1930
    • /
    • 2014
  • This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

Analysis of Relation between Conduction Path and Threshold Voltages of Double Gate MOSFET (이중게이트 MOSFET의 전도중심과 문턱전압의 관계 분석)

  • Jung, Hakkee;Han, Jihyung;Lee, Jongin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2012.10a
    • /
    • pp.818-821
    • /
    • 2012
  • This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

  • PDF

Analysis of Relation between Conduction Path and Breakdown Voltages of Double Gate MOSFET (DGMOSFET의 전도중심과 항복전압의 관계 분석)

  • Jung, Hakkee;Han, Jihyung;Kwon, Ohshin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2012.10a
    • /
    • pp.825-828
    • /
    • 2012
  • This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

  • PDF