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http://dx.doi.org/10.6109/jkiice.2015.19.3.581

Analysis of Subthreshold Swing for Ratio of Channel Length and Thickness of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.3, 2015 , pp. 581-586 More about this Journal
Abstract
This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.
Keywords
asymmetric double gate; subthreshold swing; conduction path; channel length; channel thickness;
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Times Cited By KSCI : 1  (Citation Analysis)
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