Browse > Article
http://dx.doi.org/10.6109/jkiice.2013.17.4.917

Relation between Conduction Path and Breakdown Voltages of Double Gate MOSFET  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.4, 2013 , pp. 917-921 More about this Journal
Abstract
This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.
Keywords
DGMOSFET; breakdown; Gaussian function; short channel effect; conduction path; channel dimension;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 Technology Roadmap on Semiconductors, 2007 edition, Semiconductor Industry Association. URL: http://public.itrs.net
2 J.Sallese, N.Chevillon, C.Lallement, B.Iniguez and F.Pregaldiny, "Charge Based Modeling of Junctionless Double-Gate Field-Effect Transistors ,"IEEE Trans. Electron Devices, Vol. 58, No.8, pp.2628-2637, 2011.   DOI   ScienceOn
3 H.K.Jung,"Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function," International Journal of KIMICS, Vol.9, No.3, pp.310-314, 2011.   과학기술학회마을   DOI   ScienceOn
4 D.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, Vol. 53, No.4, pp.737-741, 2006.   DOI   ScienceOn
5 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.
6 W.Fulop, "Calculation of Avalanche Breakdown Voltages of Silicon p-n Junctions," Solid-State Electronics, vol.10, pp.39-43, 1967.   DOI   ScienceOn
7 Z.Ding, G.Hu, H.Gu, R.Liu, L.Wang and T.Ting,"An Analytical Model for the Subthreshold Swing of Double-Gate MOSFETs:," IWJT-2010, May 2010.