• 제목/요약/키워드: Circuit noise

검색결과 1,301건 처리시간 0.023초

Inductive Switching Noise Suppression Technique for Mixed-Signal ICs Using Standard CMOS Digital Technology

  • Im, Hyungjin;Kim, Ki Hyuk
    • Journal of information and communication convergence engineering
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    • 제14권4호
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    • pp.268-271
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    • 2016
  • An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology

A New Noise Reduction Method Based on Linear Prediction

  • Kawamura, Arata;Fujii, Kensaku;Itho, Yoshio;Fukui, Yutaka
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 ITC-CSCC -1
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    • pp.260-263
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    • 2000
  • A technique that uses linear prediction to achieve noise reduction in a voice signal which has been mixed with an ambient noise (Signal to Noise (S-N) ratio = about 0dB) is proposed. This noise reduction method which is based on the linear prediction estimates the voice spectrum while ignoring the spectrum of the noise. The performance of the noise reduction method is first examined using the transversal linear predictor filter. However, with this method there is deterioration in the tone quality of the predicted voice due to the low level of the S-N ratio. An additional processing circuit is then proposed so as to adjust the noise reduction circuit with an aim of improving the problem of tone deterioration. Next, we consider a practical application where the effects of round on errors arising from fixed-point computation has to be minimized. This minimization is achieved by using the lattice predictor filter which in comparison to the transversal type, is Down to be less sensitive to the round-off error associated with finite word length operations. Finally, we consider a practical application where noise reduction is necessary. In this noise reduction method, both the voice spectrum and the actual noise spectrum are estimated. Noise reduction is achieved by using the linear predictor filter which includes the control of the predictor filter coefficient’s update.

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5.2 GHz 대역에서 동작하는 기억 기능 특성을 갖는 궤환 회로를 이용한 변환 이득 저잡음 증폭기 설계 (Design of Variable Gain Low Noise Amplifier with Memory Effects Feedback for 5.2 GHz Band)

  • 이원태;정지채
    • 한국전자파학회논문지
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    • 제21권1호
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    • pp.53-60
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    • 2010
  • 본 논문에서는 5.2 GHz에서 입력 신호의 크기에 따라 효율적으로 동작하는 저잡음 증폭기를 0.18 um CMOS 공정을 이용하여 설계하였다. 제안된 회로는 궤환 회로와 2단 저잡음 증폭기로 구성되어 있으며, 궤환 회로의 경우 7개의 함수 블록으로 구성되어 있다. 본 논문에서는 변화되는 신호 전압을 감지하는 것과 이전 상태를 기억하는 저장 회로에 초점을 두어 불필요한 전력 소비를 제거하였다. 기억 기능 특성을 갖는 궤환 회로의 출력값을 이용하여 통제되는 저잡음 증폭기는 11.39 dB에서 22.74 dB까지 변하며, 최고 이득 모드일 때 잡음 지수가 최적화 되도록 설계되었다. 변환 저잡음 증폭기는 1.8 V의 공급 전압에 대해서 5.68~6.75 mW를 소비한다.

공통-모드 간섭 (CMI)에 강인한 2-전극 기반 심전도 계측 회로 (CMI Tolerant Readout IC for Two-Electrode ECG Recording)

  • 강상균;남경식;고형호
    • 센서학회지
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    • 제32권6호
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    • pp.432-440
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    • 2023
  • This study introduces an efficient readout circuit designed for two-electrode electrocardiogram (ECG) recording, characterized by its low-noise and low-power consumption attributes. Unlike its three-electrode counterpart, the two-electrode ECG is susceptible to common-mode interference (CMI), causing signal distortion. To counter this, the proposed circuit integrates a common-mode charge pump (CMCP) with a window comparator, allowing for a CMI tolerance of up to 20 VPP. The CMCP design prevents the activation of electrostatic discharge (ESD) diodes and becomes operational only when CMI surpasses the predetermined range set by the window comparator. This ensures power efficiency and minimizes intermodulation distortion (IMD) arising from switching noise. To maintain ECG signal accuracy, the circuit employs a chopper-stabilized instrumentation amplifier (IA) for low-noise attributes, and to achieve high input impedance, it incorporates a floating high-pass filter (HPF) and a current-feedback instrumentation amplifier (CFIA). This comprehensive design integrates various components, including a QRS peak detector and serial peripheral interface (SPI), into a single 0.18-㎛ CMOS chip occupying 0.54 mm2. Experimental evaluations showed a 0.59 µVRMS noise level within a 1-100 Hz bandwidth and a power draw of 23.83 µW at 1.8 V.

Noise Injection Path의 주파수 특성을 고려한 IC의 전자파 전도내성 시험 방법에 관한 연구 (Evaluation of IC Electromagnetic Conducted Immunity Test Methods Based on the Frequency Dependency of Noise Injection Path)

  • 곽상근;김소영
    • 한국전자파학회논문지
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    • 제24권4호
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    • pp.436-447
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    • 2013
  • 본 논문에서는 IC(Integrated Circuit) 전자파 전도내성 시험 방법인 BCI(Bulk Current Injection)와 DPI(Direct Power Injection)를 이용하여 1.8 V I/O 버퍼에 대한 IC 전자파 전도내성을 시험하였다. IC 전자파 전도내성 시험을 회로 해석기를 사용하여 시뮬레이션 할 수 있는 등가회로 모델(model)을 개발하고 검증하였다. BCI와 DPI의 주파수에 따른 forward 전력을 비교한 결과는 주파수 성분에 따라 실제 IC에 도달하는 전자파(electromagnetic, EM) 노이즈의 양이 제한됨을 보여준다. 시뮬레이션을 통해, 가해지는 RF(Radio Frequency) 노이즈가 전달되는 경로의 삽입손실을 구하여, 하나의 시험 방법만으로는 넓은 주파수 영역에서 실질적인 IC 전자파 내성시험의 어려움을 발견하였다. 따라서 규정된 시험 방법을 보완하여 넓은 주파수 영역의 노이즈에 대해 신뢰도 높은 IC 전자파 전도내성 시험 방법을 제안한다.

커패시터 커플링 노이즈를 줄인 단일 전원 CMOS 베타선 센서 회로 설계 (Design of Single Power CMOS Beta Ray Sensor Reducing Capacitive Coupling Noise)

  • 김홍주;차진솔;황창윤;이동현;;박경환;김종범;하판봉;김영희
    • 한국정보전자통신기술학회논문지
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    • 제14권4호
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    • pp.338-347
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    • 2021
  • 본 논문에서는 DB하이텍 0.18㎛ CMOS 공정을 이용하여 진성난수 생성기에 사용되는 베타선 센서 회로를 설계하였다. CSA 회로는 PMOS 피드백 저항과 NMOS 피드백 저항을 선택하는 기능, 50fF과 100fF의 피드백 커패시터를 선택하는 기능을 갖는 회로를 제안하였다. 그리고 펄스 셰이퍼(pulse shaper) 회로는 비반전 증폭기를 이용한 CR-RC2 펄스 셰이퍼 회로를 사용하였다. 본 논문에서 사용한 OPAMP 회로는 이중 전원(dual power) 대신 단일 전원(single power) 사용하고 있으므로 CR 회로의 저항과 RC 회로의 커패시터의 한쪽 노드는 GND 대신 VCOM에 연결한 회로를 제안하였다. 그리고 펄스 셰이퍼의 출력신호가 단조 증가가 아닌 경우 비교기 회로의 출력 신호가 다수의 연속된 펄스가 발생하더라도 단조 다중발진기(monostable multivibrator) 회로를 사용하여 신호 왜곡이 안되도록 하였다. 또한 CSA 입력단인 VIN과 베타선 센서 출력단을 실리콘 칩의 상단과 하단에 배치하므로 PCB trace 간의 커패시터 커플링 노이즈(capacitive coupling noise)를 줄이도록 하였다.

AC Modeling of the ggNMOS ESD Protection Device

  • Choi, Jin-Young
    • ETRI Journal
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    • 제27권5호
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    • pp.628-634
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    • 2005
  • From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.

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A Low-Noise and Small-Size DC Reference Circuit for High Speed CMOS A/D Converters

  • Hwang, Sang-Hoon;Song, Min-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권1호
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    • pp.43-50
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    • 2007
  • In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

Phase-Locked Loop with Leakage and Power/Ground Noise Compensation in 32nm Technology

  • Kim, Kyung-Ki;Kim, Yong-Bin;Lee, Young-Jun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권4호
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    • pp.241-246
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    • 2007
  • This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9 V power supply voltage. The simulation results show that the proposed PLL achieves 88% jitter reduction at 440 MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of 40 $M{\sim}725$ MHz with a multiplication range of 1-1023, and the RMS and peak-to-peak jitter are 5psec and 42.7 psec, respectively.

대역 내 진폭 특성의 평탄도를 고려한 4단 능동 대역통과 여파기 설계 (Design of Active Bandpass Filter Considering The Amplitude Flatness of Passband)

  • 방인대
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.638-648
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    • 2003
  • An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.

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