• Title/Summary/Keyword: Circuit noise

Search Result 1,303, Processing Time 0.02 seconds

Inductive Switching Noise Suppression Technique for Mixed-Signal ICs Using Standard CMOS Digital Technology

  • Im, Hyungjin;Kim, Ki Hyuk
    • Journal of information and communication convergence engineering
    • /
    • v.14 no.4
    • /
    • pp.268-271
    • /
    • 2016
  • An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology

A New Noise Reduction Method Based on Linear Prediction

  • Kawamura, Arata;Fujii, Kensaku;Itho, Yoshio;Fukui, Yutaka
    • Proceedings of the IEEK Conference
    • /
    • 2000.07a
    • /
    • pp.260-263
    • /
    • 2000
  • A technique that uses linear prediction to achieve noise reduction in a voice signal which has been mixed with an ambient noise (Signal to Noise (S-N) ratio = about 0dB) is proposed. This noise reduction method which is based on the linear prediction estimates the voice spectrum while ignoring the spectrum of the noise. The performance of the noise reduction method is first examined using the transversal linear predictor filter. However, with this method there is deterioration in the tone quality of the predicted voice due to the low level of the S-N ratio. An additional processing circuit is then proposed so as to adjust the noise reduction circuit with an aim of improving the problem of tone deterioration. Next, we consider a practical application where the effects of round on errors arising from fixed-point computation has to be minimized. This minimization is achieved by using the lattice predictor filter which in comparison to the transversal type, is Down to be less sensitive to the round-off error associated with finite word length operations. Finally, we consider a practical application where noise reduction is necessary. In this noise reduction method, both the voice spectrum and the actual noise spectrum are estimated. Noise reduction is achieved by using the linear predictor filter which includes the control of the predictor filter coefficient’s update.

  • PDF

Design of Variable Gain Low Noise Amplifier with Memory Effects Feedback for 5.2 GHz Band (5.2 GHz 대역에서 동작하는 기억 기능 특성을 갖는 궤환 회로를 이용한 변환 이득 저잡음 증폭기 설계)

  • Lee, Won-Tae;Jeong, Ji-Chai
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.21 no.1
    • /
    • pp.53-60
    • /
    • 2010
  • This paper presents a novel gain control system composed of a feedback circuit, Two stage Low Noise Amplifier (LNA) using 0.18 um CMOS technology for 5.2 GHz. The feedback circuit consists of the seven function blocks: peak detector, comparator, ADC, IVE(Initial Voltage Elimination) circuit, switch, storage, and current controller. We focus on detecting signal and designing storage circuit that store the previous state. The power consumption of the feedback circuit in the system can be reduced without sacrificing the gain by inserting the storage circuit. The adaptive front-end system with the feedback circuit exhibits 11.39~22.74 dB gain, and has excellent noise performance at high gain mode. Variable gain LNA consumes 5.68~6.75 mW from a 1.8 V supply voltage.

CMI Tolerant Readout IC for Two-Electrode ECG Recording (공통-모드 간섭 (CMI)에 강인한 2-전극 기반 심전도 계측 회로)

  • Sanggyun Kang;Kyeongsik Nam;Hyoungho Ko
    • Journal of Sensor Science and Technology
    • /
    • v.32 no.6
    • /
    • pp.432-440
    • /
    • 2023
  • This study introduces an efficient readout circuit designed for two-electrode electrocardiogram (ECG) recording, characterized by its low-noise and low-power consumption attributes. Unlike its three-electrode counterpart, the two-electrode ECG is susceptible to common-mode interference (CMI), causing signal distortion. To counter this, the proposed circuit integrates a common-mode charge pump (CMCP) with a window comparator, allowing for a CMI tolerance of up to 20 VPP. The CMCP design prevents the activation of electrostatic discharge (ESD) diodes and becomes operational only when CMI surpasses the predetermined range set by the window comparator. This ensures power efficiency and minimizes intermodulation distortion (IMD) arising from switching noise. To maintain ECG signal accuracy, the circuit employs a chopper-stabilized instrumentation amplifier (IA) for low-noise attributes, and to achieve high input impedance, it incorporates a floating high-pass filter (HPF) and a current-feedback instrumentation amplifier (CFIA). This comprehensive design integrates various components, including a QRS peak detector and serial peripheral interface (SPI), into a single 0.18-㎛ CMOS chip occupying 0.54 mm2. Experimental evaluations showed a 0.59 µVRMS noise level within a 1-100 Hz bandwidth and a power draw of 23.83 µW at 1.8 V.

Evaluation of IC Electromagnetic Conducted Immunity Test Methods Based on the Frequency Dependency of Noise Injection Path (Noise Injection Path의 주파수 특성을 고려한 IC의 전자파 전도내성 시험 방법에 관한 연구)

  • Kwak, SangKeun;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.24 no.4
    • /
    • pp.436-447
    • /
    • 2013
  • In this paper, Integrated circuit(IC) electromagnetic(EM) conducted immunity measurement and simulation using bulk current injection(BCI) and direct power injection(DPI) methods were conducted for 1.8 V I/O buffers. Using the equivalent circuit models developed for IC electromagnetic conducted immunity tests, we investigated the reliability of the frequency region where IC electromagnetic conducted immunity test is performed. The insertion loss for the noise injection path obtained from the simulation indicates that using only one conducted immunity test method cannot provide reliable conducted immunity test for broadband noise. Based on the forward power results, we analyzed the actual amount of EM noise injected to IC. We propose a more reliable immunity test methods for broad band noise.

Design of Single Power CMOS Beta Ray Sensor Reducing Capacitive Coupling Noise (커패시터 커플링 노이즈를 줄인 단일 전원 CMOS 베타선 센서 회로 설계)

  • Jin, HongZhou;Cha, JinSol;Hwang, ChangYoon;Lee, DongHyeon;Salman, R.M.;Park, Kyunghwan;Kim, Jongbum;Ha, PanBong;Kim, YoungHee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.14 no.4
    • /
    • pp.338-347
    • /
    • 2021
  • In this paper, the beta-ray sensor circuit used in the true random number generator was designed using DB HiTek's 0.18㎛ CMOS process. The CSA circuit proposed a circuit having a function of selecting a PMOS feedback resistor and an NMOS feedback resistor, and a function of selecting a feedback capacitor of 50fF and 100fF. And for the pulse shaper circuit, a CR-RC2 pulse shaper circuit using a non-inverting amplifier was used. Since the OPAMP circuit used in this paper uses single power instead of dual power, we proposed a circuit in which the resistor of the CR circuit and one node of the capacitor of the RC circuit are connected to VCOM instead of GND. And since the output signal of the pulse shaper does not increase monotonically, even if the output signal of the comparator circuit generates multiple consecutive pulses, the monostable multivibrator circuit is used to prevent signal distortion. In addition, the CSA input terminal, VIN, and the beta-ray sensor output terminal are placed on the top and bottom of the silicon chip to reduce capacitive coupling noise between PCB traces.

AC Modeling of the ggNMOS ESD Protection Device

  • Choi, Jin-Young
    • ETRI Journal
    • /
    • v.27 no.5
    • /
    • pp.628-634
    • /
    • 2005
  • From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.

  • PDF

A Low-Noise and Small-Size DC Reference Circuit for High Speed CMOS A/D Converters

  • Hwang, Sang-Hoon;Song, Min-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.7 no.1
    • /
    • pp.43-50
    • /
    • 2007
  • In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

Phase-Locked Loop with Leakage and Power/Ground Noise Compensation in 32nm Technology

  • Kim, Kyung-Ki;Kim, Yong-Bin;Lee, Young-Jun
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.7 no.4
    • /
    • pp.241-246
    • /
    • 2007
  • This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9 V power supply voltage. The simulation results show that the proposed PLL achieves 88% jitter reduction at 440 MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of 40 $M{\sim}725$ MHz with a multiplication range of 1-1023, and the RMS and peak-to-peak jitter are 5psec and 42.7 psec, respectively.

Design of Active Bandpass Filter Considering The Amplitude Flatness of Passband (대역 내 진폭 특성의 평탄도를 고려한 4단 능동 대역통과 여파기 설계)

  • Bang, Inn-Dae
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
    • /
    • 2003.11a
    • /
    • pp.638-648
    • /
    • 2003
  • An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.

  • PDF