• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.3
• /
• pp.627-631
• /
• 2009

This paper presents a novel current steering cell matrix DAC(digital-to-analog converter) architecture to reduce decoder area. The current cell matrix of a existing architecture is selected by columns and lows thermometer code decoder of input bits. But The current cell matrix of a proposal architecture is divided 2n by the thermometer code decoder of upper input bits and are selected by the thermometer code decoder of middle and lower input bits. Because of this configuration, decoder numbers have increased. But the gate number that composed of decoder has decreased. In case of the designed 8 bit current steering cell matrix DAC, the gate number of decoder has decreased by about 55% in comparison with a existing architecture.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.9
• /
• pp.685-691
• /
• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.44-48
• /
• 2009

A simulation study of a 10-bit two-stage DAC was done by using a conventional current switch cell. The DAC adopts the segmented architecture in order to reduce the circuit complexity and the die area. The 10-bit CMOS DAC was designed in 2 blocks, a unary cell matrix for 6 MSBs and a binary weighted array for 4 LSBs, for fabrication in a 0.35-${\mu}m$ CMOS process. To cancel the accumulation of errors in each current cell, a symmetrical switching sequence is applied in the unary cell matrix for 6 MSBs. To ensure high-speed operation, a decoding circuit with one stage latch and a cascode current source were developed. Simulations show that the maximum power consumption of the 10-bit DAC is 74 mW with a sampling frequency of 100 MHz.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.35C no.4
• /
• pp.50-59
• /
• 1998

This paper describes a 3.3V 8bit CMOS digital to analog converter (DAC) with two state current cell metrix architecture which consists of a 4 MSB and a 4 LSB current matrix stage. The symmetric two stage current cell matrix architecture allow the designed DAC to reduce hot only a complexity of decoding logics, but also a number of wider swing cascode curent mirros. The designed DAC with an active chip area of 0.8 mm$_{2}$ is fabricated by a 0.8 .mu.m CMOS n-well standard digital process. The experimental data shows that the rise/fall time, the settling time, and INL/DNL are6ns, 15ns, and a less than .+-.0.8/.+-.0.75 LB, respectively. The designed DAC is fully operational for the power supply down to 2.0V, such that the DAC is suitable for a low voltage and a low power system application. The power dissipation of the DAC with a single power supply of 3.3V is measured to be 34.5mW.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.4
• /
• pp.211-216
• /
• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.3
• /
• pp.270-277
• /
• 2012

This paper presents a new DAC design strategy to achieve a wideband dynamic linearity by increasing the bandwidth of the output impedance. In order to reduce the dominant parasitic capacitance of the conventional matrix structure, all the cells associated with a unit current source and its control are stacked in a single column very closely (stacked unit cell structure). To further reduce the parasitic capacitance, the size of the unit current source is considerably reduced at the sacrifice of matching yield. The degraded matching of the current sources is compensated for by a self-calibration. A prototype 6-bit 3.3-GS/s current-steering full binary DAC was fabricated in a 1P9M 90 nm CMOS process. The DAC shows an SFDR of 36.4 dB at 3.3 GS/s Nyquist input signal. The active area of the DAC occupies only $0.0546mm^2$ (0.21 mm ${\times}$ 0.26 mm).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.12 s.354
• /
• pp.15-22
• /
• 2006

In this paper, 1.8V 8-bit 500MSPS Low-power CMOS Digital-to-Analog Converter(DAC) for UWB(Ultra Wide Band) Communication Systeme is proposed. The architecture of the DAC is based on a current steering 6+2 full matrix type which has low glitch and high linearity. In order to achieve a high speed and good performance, a current cell with a high output impedance and wide swing output range is designed. Further a thermometer decoder with same delay time and low-power switching decoder for high efficiency performance are proposed. The proposed DAC was implemented with TSMC 0.18um 1-poly 6-metal N-well CMOS technology. The measured SFDR was 49dB when the output frequency was 50MHz at 500MS/s sampling frequency. The measured INL and DNL were 0.9LSB and 0.3LSB respectively. The DAC power dissipation was 20mW and the effective chip area was $0.63mm^2$.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.6
• /
• pp.28-36
• /
• 1997

In this work, a highly linear video-speed CMOS current-mode digital-to-analog converter (DAC) is proposed. A newswitching scheme for the current cell matrix of the DAC simultaneously reduces graded and symmetrical errors to improve integral nonlinearities (INL). The proposed DAC is designed to operate at any supply voltage between 3V and 5V, and minimizes the glitch energy of analog outputs with degliching circuits developed in this work. The prototype dAC was implemented in a LG 0.8um n-well single-poly double-metal CMOS technology. Experimental results show that the differential and integral nonlinearities are less than .+-. LSB and .+-.0.8LSB respectively. The DAC dissipates 75mW at a 3V single power supply and occupies a chip area of 2.4 mm * 2.9mm.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.11
• /
• pp.61-66
• /
• 2005

This paper describes a 10-bit 210MHz CMOS current-mode Digital-to-Analog Converter (DAC) consisting of 6 bit MSB current cell matrix Sub-DAC, 2 bit mSB unary current source Sub-DAC, and 2 bit LSB binary weighting Sub-DAC for Wireless LAN application. A new deglitch circuit is proposed to control a crossing point of signals and minimize a glitch energy. The proposed 10-bit CMOS current mode DAC was designed by a $0.35{\mu}m$ CMOS double-poly four-metal technology rate of 210MHz, DNL/INL of ${\pm}0.7LSB/{\pm}1.1LSB$, a glitch energy of $76pV{\cdot}sec$, a SNR of 50dB, a SFDR of 53dB at 200MHz sampling clock and power dissipation of 83mW at 3.3V

• Journal of the Korea Society of Computer and Information
• /
• v.17 no.9
• /
• pp.149-156
• /
• 2012

The Fabric Electrode was proposed for the effective production of the display based on electrowetting in this paper and designed the source driver of flexible display which could be driven by the electrowetting cell. The electrowetting cell matrix was implemented on the substrate(PET) by imprinting. The driver fabric, wetting electrode fabric and conductive fabric was placed horizontally and vertically in the groove between cell matrix and the electrowetting cell matrix can be driven by the cross-point as electric connection. The integration density of driver module is decreased because using the R/2R DAC module per channel in the conventional method. The proposed method could utilize the effective production process and reduce the production price of a display panel. The source driver which consume lower power and can increase the integration density because of reducing the number of driver device per channel was designed and evaluate the driver operation by the simulation using the VHDL programming in this paper.