• 제목/요약/키워드: CMOS mixer

검색결과 100건 처리시간 0.018초

Adjustable-Performace, Single-Ended Input Double-Balanced Mixer

  • Choi, Jin-Yong;Lee, Kyung-Ho;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.248-252
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    • 2001
  • A noble single-ended input, double-balanced mixer topology is proposed. The mixer incorporates the common-source amplifier input stage with inductive degeneration for impedance matching. The analysis based on simulations shows that the overall performance of the mixer is excellent and is adjustable by varying the input transistor size to give best characteristics for the given linearity specifications.

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A CMOS Frequency Synthesizer Block for MB-OFDM UWB Systems

  • Kim, Chang-Wan;Choi, Sang-Sung;Lee, Sang-Gug
    • ETRI Journal
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    • 제29권4호
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    • pp.437-444
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    • 2007
  • A CMOS frequency synthesizer block for multi-band orthogonal frequency division multiplexing ultra-wideband systems is proposed. The proposed frequency synthesizer adopts a double-conversion architecture for simplicity and to mitigate spur suppression requirements for out-of-band interferers in 2.4 and 5 GHz bands. Moreover, the frequency synthesizer can consist of the fewest nonlinear components, such as divide-by-Ns and a mixer with the proposed frequency plan, leading to the generation of less spurs. To evaluate the feasibility of the proposed idea, the frequency synthesizer block is implemented in 0.18-${\mu}m$ CMOS technology. The measured sideband suppression ratio is about 32 dBc, and the phase noise is -105 dBc/Hz at an offset of 1 MHz. The fabricated chip consumes 17.6 mA from a 1.8 V supply, and the die-area including pads is $0.9{\times}1.1\;mm^2$.

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3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

  • Ko, Min-Su;Kim, Du-Ho;Rucker, Holger;Choi, Woo-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권4호
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    • pp.256-261
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    • 2011
  • We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in $0.25-{\mu}m$ SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down-conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.

900MHz GSM 디지털 단말기용 Si BiCMOS RF송수신 IC개발 (I) : RF수신단 (An Integrated Si BiCMOS RF Transceiver for 900 MHz GSM Digital Handset Application (I) : RF Receiver Section)

  • 박인식;이규복;김종규;김한식
    • 전자공학회논문지S
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    • 제35S권9호
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    • pp.9-18
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    • 1998
  • 본 논문에서는 E-GSM 단말기용 Transceiver RFIC 칩 수신단의 회로설계, 제작 및 특성측정을 수행하였다. AMS사의 0.8${\mu}m$ 실리콘 BiCMOS 공정을 사용하여 $10 {\times} 10 mm$ 크기를 갖는 80핀 TQFP 패키지로 제작하였으며, 동작전압 3.3V에서 우수한 RF 성능을 얻었다. 제작된 RFIC의 수신단에는 LNA, Down Conversion Mixer, AGC, SW-CAP 및 Down Sampling Mixer를 포함하고 있으며, 제작된 RFIC의 사용 주파수 범위는 925 ~ 960MHz, 전류소모는 67mA, 최소검출레벨은 -105dBm의 특성을 얻었다.

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디지털 TV 튜너용 900MHz CMOS RF Front-End IC의 설계 및 구현 (Design of 900MHz CMOS RF Front-End IC for Digital TV Tuner)

  • 김성도;유현규;이상국
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.104-107
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    • 2000
  • We designed and implemented the RFIC(RF front-end IC) for DTV(Digital TV) tuner. The DTV tuner RF front-end consists of low noise IF amplifier fur the amplification of 900 MHz RF signal and down conversion mixer for the RF signal to 44MHz IF conversion. The RFIC is implemented on ETRI 0.8u high resistive (2㎘ -cm) and evaluated by on wafer, packaged chip test. The gain and IIP3 of IF amplifier are 15㏈ and -6.6㏈m respectively. For the down conversion mixer gain and IIP3 are 13㏈ and -6.5㏈m. Operating voltage of the IF amplifier and the down mixer is 5V, current consumption are 13㎃ and 26㎃ respectively.

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Single-ended Differential RF Circuit Topologies Utilizing Complementary MOS Devices

  • Kim, Bonkee;Ilku Nam;Lee, Kwyro
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권1호
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    • pp.7-18
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    • 2002
  • Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

1.8V Gilbert Cell CMOS Downconversion Mixer Using Bulk for 2.4GHz ISM band

  • Chae, Yong-Doo;Hwang, Young-Seung;Oh, Bum-Suk;Woong Jung
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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    • pp.391-395
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    • 2003
  • In this work, we have designed Gilbert cell downconversion mixer using 0.25um Anam CMOS process, we also have analyzed Conversion gain and IIP3 using Taylor series in our own unique way. Especially, bulk terminal is used as LO( Local Oscillator) input for reduction of power consumption and supply voltage. Supply voltage used in this design is lower than 1.8V and core current is less than 500uA. The simulation experiments showed that the conversion gain, IIP3, and power consumption were -1 dB, 4.46dBm, and 0.8mW, respectively.

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5 GHz 무선랜용 수신기의 설계 (CMOS Front-End for a 5 GHz Wireless LAN Receiver)

  • 이혜영;유상대;이주상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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    • pp.894-897
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    • 2003
  • Recently, the rapid growth of mobile radio system has led to an increasing demand of low-cost high performance communication IC's. In this paper, we have designed RF front end for wireless LAN receiver employ zero-IF architecture. A low-noise amplifier (LNA) and double-balanced mixer is included in a front end. The zero-IF architecture is easy to integrate and good for low power consumption, so that is coincided to requirement of wireless LAN. But the zero-IF architecture has a serious problem of large offset. Image-reject mixer is a good structure to solve offset problem. Using offset compensation circuit is good structure, too. The front end is implemented in 0.25 ${\mu}m$ CMOS technology. The front end has a noise figure of 5.6 dB, a power consumption of 16 mW and total gain of 22 dB.

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위성 수신기용 광대역 튜너 시스템의 CMOS 단일칩화에 관한 연구 (A CMOS Fully Integrated Wideband Tuning System for Satellite Receivers)

  • 김재완;류상하;서범수;김성남;김창봉;김수원
    • 대한전자공학회논문지SD
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    • 제39권7호
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    • pp.7-15
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    • 2002
  • The digital DBS tuner is designed and implemented in a CMOS process using a direct-conversion architecture that offers a high degree of integration. To generate mathched LO I/Q quadrature signals covering the total input frequency range, a fully integrated ring oscillator is employed. And, to decrease a high level of phase noise of the ring oscillator, a frequency synthesizer is designed using a double loop strucure. This paper proposes and verifies a band selective loop for fast frequency switching time of the double loop frequency synthesizer. The down-conversion mixer with source follower input stages is used for low voltage operation. An experiment implementation of the frequency synthesizer and mixer with integrated a 0.25um CMOS process achieves a switching time of 600us when frequency changes from 950 to 2150MHz. And, the experiment results show a quadrature amplitude mismatch of max. 0.06dB and a quadrature phase mismathc of max. >$3.4^{\circ}$.

A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology

  • Kim, Seong-Kyun;Cui, Chenglin;Kim, Byung-Sung;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.426-432
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    • 2012
  • A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.