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http://dx.doi.org/10.5573/JSTS.2011.11.4.256

3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator  

Ko, Min-Su (Dept. of Electrical and Electronic Engineering, Yonsei University)
Kim, Du-Ho (Samsung Electronics Company Ltd.)
Rucker, Holger (IHP)
Choi, Woo-Young (Dept. of Electrical and Electronic Engineering, Yonsei University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.11, no.4, 2011 , pp. 256-261 More about this Journal
Abstract
We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in $0.25-{\mu}m$ SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down-conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.
Keywords
Low-noise amplifier (LNA); millimeterwave integrated circuits; mixed-mode demodulator; mixer; 60 GHz;
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