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http://dx.doi.org/10.5573/JSTS.2012.12.4.426

A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology  

Kim, Seong-Kyun (College of Information & Communication Engineering, Sungkyunkwan University)
Cui, Chenglin (College of Information & Communication Engineering, Sungkyunkwan University)
Kim, Byung-Sung (College of Information & Communication Engineering, Sungkyunkwan University)
Kim, SoYoung (College of Information & Communication Engineering, Sungkyunkwan University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.12, no.4, 2012 , pp. 426-432 More about this Journal
Abstract
A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.
Keywords
CMOS integrated circuit; k-band; millimeter-wave; radar; transceiver; low-noise amplifier; power amplifier;
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