• 제목/요약/키워드: CMOS digital circuit

검색결과 277건 처리시간 0.032초

A Low-Voltage High-Performance CMOS Feedforward AGC Circuit for Wideband Wireless Receivers

  • Alegre, Juan Pablo;Calvo, Belen;Celma, Santiago
    • ETRI Journal
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    • 제30권5호
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    • pp.729-734
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    • 2008
  • Wireless communication systems, such as WLAN or Bluetooth receivers, employ preamble data to estimate the channel characteristics, introducing stringent settling-time constraints. This makes the use of traditional closed-loop feedback automatic gain control (AGC) circuits impractical for these applications. In this paper, a compact feedforward AGC circuit is proposed to obtain a fast-settling response. The AGC has been implemented in a 0.35 ${\mu}m$ standard CMOS technology. Supplied at 1.8 V, it operates with a power consumption of 1.6 mW at frequencies as high as 100 MHz, while its gain ranges from 0 dB to 21 dB in 3 dB steps through a digital word. The settling time of the circuit is below 0.25 ${\mu}s$.

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A Low-Noise and Small-Size DC Reference Circuit for High Speed CMOS A/D Converters

  • Hwang, Sang-Hoon;Song, Min-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권1호
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    • pp.43-50
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    • 2007
  • In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

Full Flash 8-Bit CMOS A/D 변환기 설계 (A Design of Full Flash 8-Bit CMOS A/D Converter)

  • 최영규;이천희
    • 대한전자공학회논문지
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    • 제27권11호
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    • pp.126-134
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    • 1990
  • CMOS VLSI 기술에서 고속으로 데이타를 인식하기 위해서는 비교적 낮은 전달 콘덕턴스와 MOS 소자 장치들의 불균형을 극복하는 것이 중요하다. 그러나 CMOS 소자들의 한계 때문에 VLSI 회로설계는 일반적으로 CMOS 동작에 알맞도록 바이폴라 A/D(analog-to-digital)변환기가 사용되었다. 또한 파이프라인으로 종속 연결된 RSA에 의하여 전압 비교가 이뤄지는 VLSI CMOS 비교기를 설계하였다. 따라서 본 논문에서는 파이프라인으로 연결된 CMOS 비교기와 병합한 A/D 변환기를 설계하였다.

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광대역 전디지털 클록 데이터 복원회로 설계 (Design of Wide-range All Digital Clock and Data Recovery Circuit)

  • 고귀한;정기상;김강직;조성익
    • 전기학회논문지
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    • 제61권11호
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    • pp.1695-1699
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    • 2012
  • This paper is proposed all digital wide-range clock and data recovery circuit. The Proposed clock data recovery circuit is possible input data rate which is suggested is wide-range that extends from 100Mb/s to 3Gb/s and used an phase error detector which can use a way of over-sampling a data by using a 1/2-rate multi-phase clock and phase rotator which is regular size per $2{\pi}$/16 and can make a phase rotation. So it could make the phase rotating in range of input data rate. Also all circuit is designed as a digital which has a specificity against a noise. This circuit is designed to 0.13um CMOS process and verified simulation to spectre tool.

130 nm CMOS 공정을 이용한 UWB High-Band용 저전력 디지털 펄스 발생기 (Digital Low-Power High-Band UWB Pulse Generator in 130 nm CMOS Process)

  • 정창욱;유현진;어윤성
    • 한국전자파학회논문지
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    • 제23권7호
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    • pp.784-790
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    • 2012
  • 본 논문에서는 UWB의 6~10 GHz 주파수 대역을 위한 디지털 방식의 CMOS UWB 펄스 발생기를 제안하였다. 제안된 펄스 발생기는 매우 적은 전력 소모와 간단한 구조로 설계 및 구현되었다. 이 펄스 발생기는 가변되는 shunt capacitor 방식으로 구성된 CMOS delay line을 사용하여 중심 주파수를 제어할 수 있게 하였고, Gaussian Pulse Shaping 회로를 이용하여 FCC 등에서 제시하는 UWB 스펙트럼 규정을 만족할 수 있도록 설계하였다. 측정결과, 가변 가능한 중심 주파수는 4.5~7.5 GHz까지 자유롭게 조절이 가능하였고, 펄스의 폭은 대략 1.5 ns였다. 그리고 10 MHz의 PRF 조건에서 310 mV pp의 크기의 펄스 신호를 보여주었다. 회로는 0.13 um CMOS 공정으로 제작되었고, 코어의 크기는 $182{\times}65um^2$로 매우 작은 크기로 설계되었으며, 평균 소모 전력은 1.5 V 전원을 사용하는 출력 buffer에서 11.4 mW를 소모하고, 이를 제외한 코어에서는 0.26 mW의 매우 작은 전력을 소모하고 있다.

Digital CMOS Temperature Sensor Implemented using Switched-Capacitor Circuits

  • Son, Bich;Park, Byeong-Jun;Gu, Gwang-Hoe;Cho, Dae-Eun;Park, Hueon-Beom;Jeong, Hang-Geun
    • 센서학회지
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    • 제25권5호
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    • pp.326-332
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    • 2016
  • A novel CMOS temperature sensor with binary output is implemented by using fully differential switched-capacitor circuits for resistorless implementation of the temperature sensor core. Temperature sensing is based on the temperature characteristics of the pn diodes implemented by substrate pnp transistors fabricated using standard CMOS processes. The binary outputs are generated by using the charge-balance principle that eliminates the division operation of the PTAT voltage by the bandgap reference voltage. The chip was designed in a MagnaChip $0.35-{\mu}m$ CMOS process, and the designed circuit was verified using Spectre circuit simulations. The verified circuit was laid out in an area of $950{\mu}m{\times}557 {\mu}m$ and is currently under fabrication.

저전압용 CMOS 연산 증폭기를 위한 전력 최소화 기법 및 그 응용 (A power-reduction technique and its application for a low-voltage CMOS operational amplifier)

  • 장동영;이용미;이승훈
    • 전자공학회논문지C
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    • 제34C권6호
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    • pp.37-43
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    • 1997
  • In this paper, an analog-domain powr-reduction technique for a low-voltage CMOS operational amplifier and its application to clock-based VLSI systems are proposed. The proposed technique cuts off the bias current of the op amp during a half cycle of the clock in the sleeping mode and resumes the curent supply sequentially during the remaining cycle of the clock in the normal operating mode. The proposed sequential sbiasing technique reduces about 50% of the op amp power and improves the circuit performance through high phase margin and stable settling behavior of the output voltage. The power-reduction technique is applied to a sample-and-hold amplifier which is one of the critical circuit blocks used in the front-end stage of analog and/or digital integrated systems. The SHA was simulated and analyzed in a 0.8.mu.m n-well double-poly double-metal CMOS technology.

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A 6.5 - 8.5 GHz CMOS UWB Transmitter Using Switched LC VCO

  • Eo, Yun Seong;Park, Myung Cheol;Ha, Min-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.417-422
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    • 2015
  • A 6.5 - 8.5 GHz CMOS UWB transmitter is implemented using $0.18{\mu}m$ CMOS technology. The transmitter is mainly composed of switched LC VCO and digital pulse generator (DPG). Using RF switch and DPG, the uniform power and sidelobe rejection are achieved irrespective of the carrier frequency. The measured UWB carrier frequency range is 7 ~ 8 GHz and the pulse width is tunable from 1 to 2 ns. The measured energy efficiency per pulse is 2.1 % and the power consumption is 0.6 mW at 10 Mbps without the buffer amplifier. The chip core size is $0.72mm^2$.

2X Converse Oversampling 1.65Gb/s/ch CMOS 준 디지털 데이터 복원 회로 (2X Converse Oversampling 1.65Gb/s/ch CMOS Semi-digital Data Recovery)

  • 김길수;김규영;손관수;김수원
    • 대한전자공학회논문지SD
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    • 제44권6호
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    • pp.1-7
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    • 2007
  • 본 논문에서는 고성능 멀티미디어 인터페이스 (High Definition Multimedia Interface: HDMI) 용 수신기의 전력 절감과 면적 감소를 위한 2X converse oversampling 방식의 준 디지털 데이터 복원 회로를 제안한다. 제안하는 데이터 복원 회로는 2X converse oversampling 방식의 데이터 검출 알고리즘과 준 디지털 구조를 이용해 전력과 유효 면적을 효과적으로 감소시킨다. 제안하는 회로의 성능을 검증하기 위해서 0.18um CMOS 공정을 이용하여 칩이 제작되었으며, 측정 결과 14.4mW의 전력을 소모하고, $0.152mm^2$의 유효 면적을 차지하며, 0.7UIpp의 Jitter tolerance 성능을 나타내므로 HDMI용 수신기의 전체 전력과 유효면적을 효과적으로 감소시킬 수 있다.

A 9-Bit 80-MS/s CMOS Pipelined Folding A/D Converter with an Offset Canceling Technique

  • Lee, Seung-Chul;Jeon, Young-Deuk;Kwon, Jong-Kee
    • ETRI Journal
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    • 제29권3호
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    • pp.408-410
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    • 2007
  • A 9-bit 80-MS/s CMOS pipelined folding analog-to-digital converter employing offset-canceled preamplifiers and a subranging scheme is proposed to extend the resolution of a folding architecture. A fully differential dc-decoupled structure achieves high linearity in circuit design. The measured differential nonlinearity and integral nonlinearity of the prototype are ${\pm}0.6$ LSB and ${\pm}1.6$ LSB, respectively.

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