• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.970-973
• /
• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• 전기전자학회논문지
• /
• 제18권2호
• /
• pp.228-233
• /
• 2014

In this paper, we propose a CMOS-memristor hybrid circuit that can perform 4-bit multiplication for future energy-efficient computing in nano-scale digital systems. The proposed CMOS-memristor hybrid circuit is based on the parallel architecture with AND and OR planes. This parallel architecture can be very useful in improving the power-delay product of the proposed circuit compared to the conventional CMOS array multiplier. Particularly, from the SPECTRE simulation of the proposed hybrid circuit with 0.13-mm CMOS devices and memristors, this proposed multiplier is estimated to have better power-delay product by 48% compared to the conventional CMOS array multiplier. In addition to this improvement in energy efficiency, this 4-bit multiplier circuit can occupy smaller area than the conventional array multiplier, because each cross-point memristor can be made only as small as $4F^2$.

• Journal of information and communication convergence engineering
• /
• 제14권4호
• /
• pp.268-271
• /
• 2016

An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology

• ETRI Journal
• /
• 제29권1호
• /
• pp.70-78
• /
• 2007

A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.1041-1044
• /
• 2003

In this paper, a new CMOS fully integrated frequency-to-digital converter is proposed. The operation of the proposed circuit is based on a pulse-shrinking delay element. In the proposed circuit, a resolution of the converted digital output can be easily improved by increasing the number of the pulse-shrinking element. Also the input frequency range can be easily changed through controlling bias voltage in the pulse-shrinking element. The simulation of the designed circuit carried out by HSPICE using the CMOS 0.35${\mu}{\textrm}{m}$ process technology.

• IEIE Transactions on Smart Processing and Computing
• /
• 제2권4호
• /
• pp.248-254
• /
• 2013

The size and power consumption of digital circuits including the dimming circuit part will increase for high-performance solid state lighting (SSL) systems in the future. This study examined the low-power consumption of adiabatic dynamic CMOS logic (ADCL) due to the principles of adiabatic charging. Furthermore, the designed low-power ADCL digital pulse width modulation (PWM) was optimized for SSL dimming systems. For this purpose, an ADCL digital 3-bit PWM was optimized in two steps. In the first step, the architecture of the ADCL digital 3-bit PWM was miniaturized. In the second step, the clock cut-off circuit was designed and added to the ADCL PWM. As a result, compared to the original configuration, 60 transistors and 15 capacitors of ADCL digital 3-bit PWM were reduced for miniaturization. Moreover, the clock cut-off circuit, which controls wake-up and sleep mode of ADCL D-FFs, was designed. The power consumption of an optimized ADCL digital PWM for all bit patterns decreased by 54 %.

• Transactions on Electrical and Electronic Materials
• /
• 제7권3호
• /
• pp.99-102
• /
• 2006

The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.

• 한국정보통신학회논문지
• /
• 제17권2호
• /
• pp.378-384
• /
• 2013

본 논문에서는 칩 내부의 온도를 측정하기 위한 CMOS 온도 센서가 제안된다. 제안하는 온도 센서는 칩 내부의 온도에 비례하는 전압을 생성하는 proportional-to-absolute-temperature (PTAT) 회로와 디지털 인터페이스를 위한 4-비트 아날로그-디지털 변환기로 구성된다. 소면적을 가지는 PTAT 회로는 CMOS 공정에서 vertical PNP 구조를 이용하여 설계된다. 온도변화에 둔감한 저전력 4-비트 아날로그-디지털 변환기를 구현하기 위해 아날로그 회로를 최소로 사용하는 축차근사형 아날로그-디지털 변환기가 이용되며, 이를 위해 커패시터-기반 디지털-아날로그 변환기와 시간-도메인 비교기를 이용한다. 제안된 온도 센서는 2.5V $0.25{\mu}m$ 1-poly 6-metal CMOS 공정에서 제작되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. 구현된 온도 센서의 면적과 전력 소모는 각각 $130{\times}390{\mu}m^2$과 $868{\mu}W$이다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.137-140
• /
• 2002

This paper is proposed a 8-bit anolog to digital converter for CMOS image sensor. A anolog to digital converter for CMOS image sensor is required function to control gain. Proposed anolog to digital converter is used frequency divider to control gain. At 3.3 Volt power supply, total static power dissipation is 8mW and programmable gain control range is 30dB. The gain control range can be easily increased with insertion of additional flip-flop at divided-by-N frequency divider circuit.

• 한국정보통신학회논문지
• /
• 제13권6호
• /
• pp.1117-1122
• /
• 2009

본 논문에서는 온도 센서 및 온도 측정을 위한 제어회로를 설계하였다. 설계된 회로는 기존의 방법들과는 달리 일반적인 CMOS(Complementary Metal Oxide Semiconductor) 공정에서 추가 공정없이 제작 가능하도록 설계하였으며, 온도는 디지털 값으로 출력 되도록 구성하였다. 설계되어진 회로는 5volts 공급전압을 사용하였으며, 0.5${\mu}m$ CMOS 공정을 사용하였다. 온도 측정을 위한 회로는 PWM(Pulse Width Modulation) 제어회로, VCO(Voltage controlled oscillator), 카운터 그리고 레지스터로 구성되어 있다. PWM 제어회로의 동작 주파수는 23kHz 이며, VCO의 동작 주파수는 416kHz, 1MHz, 2MHz를 사용하였다. 회로의 동작은 SPICE(Simulation Program with Integrated Circuit Emphasis)를 사용하여 확인 하였다.