• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.951-954
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• 2003

A CMOS second generation current conveyor, which can be operated from a low-voltage power supply, is presented in this article. The proposed circuit is simple, small in size and suitable for implementing in standard CMOS process. It provides the resistance at port X lower than 3.5${\Omega}$. The bandwidth of the transfer characteristic extends beyond 326MHz. PSPICE simulation results demonstrating the characteristics of the proposed circuit are included.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.545-548
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• 2004

The paper describes the design of high-speed, high-resolution Sample-and-Hold circuit which shows the conversion rate 80MHz and the power supply of 3.3v with 0.35um CMOS 2-poly 4-metal process for high-speed, high resolution Analog-to-Digital Converter. For improving Dynamic performance of Sample-and-Hold, Two Double bootstrap switch and high performance operational amplifier with gain booster, which are used. and For physical stability of Sample and Hold circuit, reduces excess voltage of gate in bootstrap switch. Simulation results using HSPICE shows the SFDR of 71dB, 75dB in conversion rate of 80MHz result for two inputs(0.5Vpp, 10MHz and 1Vpp, 10MHz) and the power dissipation of 48mW at single 3.3V supply voltage.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.941-944
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• 2005

In this paper, the analysis of input power matching for CMOS RF Low Noise Amplifier (LNA) design is introduced. With two input power matching techniques, the performance of LNAs is estimated according to gain and noise figure. This process can be expressed easily by theoretical method and using simulation. These analytical methods are useful in that they can provide enough insights for designing CMOS RF LNAs.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.499-502
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• 2004

A two-stage Class E power amplifier operated at 2.44GHz is designed in 0.25-$\mu$m CMOS process for Class-l Bluetooth application. The power amplifier employs c1ass-E topology to exploit its soft-switching property for high efficiency. A preamplifter with common-mode configuration is used to drive the output-stage of Class-E type. The amplifier delivers 20-dBm output power with 70$\%$ PAE (power -added-efficiency) at 2-V supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.426-432
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• 2012

A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.370-377
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• 2017

This paper presents a simple noise margin (NM) model of MOS current mode logic (MCML) gates especially in CMOS processes where a large device mismatch deteriorates logic reliability. Trade-offs between speed and logic reliability are discussed, and a simple yet accurate NM equation to capture process-dependent degradation is proposed. The proposed NM equation is verified for 130-nm, 110-nm, 65-nm, and 40-nm CMOS processes and has errors less than 4% for all cases.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.691-694
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• 1998

This paper describes a 6-b 400 MSPS CMOS folding and interpolating(F&I) ADC. To overcome the delay difference of an MSB part and an LSB part in a typical F&I ADC the ADC is composed of only one LSB part and to alleviate the offset voltage of comparators in the LSB part preamplifiers are used in front of the comparators. This paper analyzes a folder and presents a design procedure of the folder. The ADC has the DNL of 0.3 LSB and the INL of 0.6 LSB and consumes the power of 120mW $$ 3 V. The ADC is designed in a 0.6 $\mu\textrm{m}$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.4
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• pp.52-62
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• 1996

In this paper, a new continuous-time current-mode integrator as basic building block of the low-voltage analog current-mode active filters was proposed. Compared to the current-mode integrator which was proposed by Zele, the proposed current-mode integrator had higher unity gain frequency and output impedance in addition to lower power dissipation. And also, a current-mode third-order lowpass active filter was designed with the proposed current-mode integrator. The designed circuits were fabricated using the ORBIT's 1.2.mu.m double-poly double-metal CMOS n-well process. The experimental resutls of the active filter designed and fabricated for this research have shown that it has the performance of 44.5MHz cutoff frequency, 3.3mW power dissipation and the third-order active filter area was 0.12mm$^{2}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.255-265
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• 2012

This paper presents a 15-GHz multiphase rotary traveling-wave voltage-controlled oscillator (RTW VCO) where a shielded coplanar stripline (CPS) is exploited to provide better shielding protection and lower phase noise at a moderate cost of characteristic impedance and power consumption. Test chips were implemented in a standard 90-nm CMOS process, demonstrating the measured results of 2-GHz frequency tuning range, -11.3-dBm output power, -109.6-dBc/Hz phase noise at 1-MHz offset, and 2-ps RMS clock jitter at 15 GHz. The chip core occupies the area of $0.2mm^2$ and dissipates 12 mW from a single 1.2-V supply.

• International Journal of Aeronautical and Space Sciences
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• v.13 no.2
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• pp.260-265
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• 2012

Satellite devices for fine attitude control of the Science & Technology Satellite-2 (STSAT-2). Based on the mission requirements of STSAT-2, the conventional analog-type sun sensors were found to be inadequate, motivating the development of a compact, fast and fine digital sun sensor (FDSS). The FDSS uses a CMOS image sensor and has an accuracy of less than 0.03degrees, an update rate of 5Hz and a weight of less than 800g. A pinhole-type aperture is substituted for the optical lens to minimize its weight. The target process speed is obtained by utilizing the Field Programmable Gate Array (FPGA), which acquires images from the CMOS sensor, and stores and processes the image data. The sensor accuracy is maintained by a rigorous centroid algorithm. This paper describes the FDSS designs, realizations, tests and calibration results.