• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.587-590
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• 2005

We investigated the input impedance characteristics of UHF-band RFID tag chip for increased reading range. A voltage multiplier designed using 0.4 ${\mu}m$ $zero-V_T$ MOSFET showed that DC output voltage of 2 V can be obtained using standard CMOS process. The input impedance of the voltage multiplier was examined to achieve impedance level for maximum reading distance using analytical and numerical approaches. The input impedance of the voltage multiplier could be varied in a wide range by selecting the size of MOSFET and the number of multiplying stages of the voltage multiplier, and thus, the impedance level required for the tag antenna can be obtained in presence of other tag circuit blocks.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.497-500
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• 2005

This paper presents a design of a hybrid sensor chip which integrates an A/D converter module and a phase measurement module for measuring power line phase. Recursive sliding DFT based phase measurement module is designed using time shared multiplier which can reduce the size of SoC implementation. A/D converter is based on the sigma delta modulation in order to minimize the implementation space of the analog part and designed to obtain 8-bit resolution. Computer simulations and FPGA implementation are performed to verify hybrid sensor chip design. The hybrid sensor chip for 4-channel power line phase measurement is fabricated by using 0.35 micrometer CMOS process.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.691-694
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• 2005

This paper proposed 10Gbps driver with pre-emphasis for high speed transmitter. the proposed driver increase bandwidth using Ft doubler method and design driver block and pre-emphasis block in together. Pre-emphasis functionality confirmed to control VDS of current source o driver, not to control slew rate of termination resistor. The proposed driver is designed in a 1.5V/0.13um 1-poly, 5-metal CMOS mixed-signal process.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.873-876
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• 2005

A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.294-301
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• 2017

This paper presents a low power ${\Sigma}{\Delta}$ modulator for an implantable chip to acquire a bio-signal such as EEG, DBS, and EMG. In order to reduce a power consumption of the proposed fourth order modulator, two op-amps utilized for the first two integrators are reconfigured to drive the second two integrators. The KT/C noise reduction circuit in the first two integrators is employed to enhance SNR of the modulator. The proposed circuit was fabricated in a 0.18 um CMOS n-well 1 poly 6 metal process with the active chip core area of $900um{\times}800um$ and the power consumption of 830 uW. Measurement results were demonstrated to be SNDR of 76 dB, DR of 77 dB, ENOB of 12.3 bit at the input frequency of 250 Hz and the clock frequency of 256 kHz. FOM1 and FOM2 were measured to be 41 pJ/step and 142.4 dB, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.387-400
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• 2017

A new junction-splitting based SAR ADC with a redundant searching capacitor array structure in $0.13{\mu}m$ CMOS process to alleviate capacitor mismatch effects, is presented. The normalized average power has a factor of 0.35 to the conventional SAR ADC at 10-bit conversion accuracy. Statistical experiments show the number of missing codes resulting from the mismatch reduces by 95% for 3% unit-capacitor mismatch ratio, while keeping the conversion energy to that of the conventional JS capacitor array.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.632-634
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• 2004

First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.12
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• pp.596-603
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• 2002

New layout methods for implementing MOS switches of ultra low channel resistance are presented. These area-effective layout methods include the waffle structure, zipper structure, star zag structure and fingered waffle structure. The design equations for these new layout structures are analyzed. The area-effectiveness of these structures is compared with that of the conventional alternating bar structure. MOS switches of the waffle structure were fabricated using a standard 0.25um CMOS process. The experimental characterization results of the fabricated MOS switches are presented. The analytical comparison and experimental results show that area reductions over 40% are achievable with the new structures.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.6
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• pp.1133-1138
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• 2007

DLLs(Delay Locked Loops) have widely been used in many systems in order to achieve the clock synchronization. A SMD (Synchronous Mirror Delay) structure is used both for skew reduction and for DCC (Duty Cycle Correction). In this paper, a SMD based DLL with DCC using Reduced Delay Lines is proposed in order to reduce the clock skew and correct the duty cycle. The merged structure allows the forward delay array to be shared between the DLL and the DCC, and yields a 25% saving in the number of the required delay cells. The designed chip was fabricated using a $0.25{\mu}m$ 1-poly, 4-metal CMOS process. Measurement results showed the 3% duty cycle error when the input signal ranges from 80% to 20% and the clock frequency ranges from 400MHz to 600MHz. The locking operation needs 3 clock and duty correction requires only 5 clock cycles as feature with SMD structure.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.629-632
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• 1998

This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.