• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.142-147
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• 2012

This paper presents a mixed-mode CMOS duty-cycle corrector (DCC) circuit that has a dynamic frequency scaling (DFS) counter and coarse and fine tuning adjustments. A higher duty-cycle correction accuracy and smaller jitter have been achieved by utilizing the DFS counter that reduces the bit-switching glitch effect of a digital to analog converter (DAC). The proposed circuit has been designed using a 0.18-${\mu}m$ CMOS process. The measured duty cycle error is less than ${\pm}1.1%$ for a wide input duty-cycle range of 25-75% over a wide freqeuncy range of 0.5-1.5 GHz.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.362-367
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• 2018

A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The proposed binary image sensor has the advantages of reduced power consumption and fixed pattern noise (FPN). A gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector is used as the proposed CMOS binary image sensor. The GBT PMOSFET-type photodetector has a floating gate that amplifies the photocurrent generated by incident light. Therefore, the sensitivity of the GBT PMOSFET-type photodetector is higher than that of other photodetectors. The proposed CMOS binary image sensor consists of a pixel array with $394(H){\times}250(V)$ pixels, scanners, bias circuits, and column parallel readout circuits for binary image processing. The proposed CMOS binary image sensor was analyzed by simulation. Using the dynamic comparator, a power consumption reduction of approximately 99.7% was achieved, and this performance was verified by the simulation by comparing the results with those of a two-stage comparator. Also, it was confirmed using simulation that the FPN of the proposed CMOS binary image sensor was successfully reduced by use of the double sampling process.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• Journal of IKEEE
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• v.24 no.4
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• pp.942-949
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• 2020

In this paper, we propose an improved algorithmic ADC for CMOS Image Sensor that is suitable for a column-parallel readout circuit. The algorithm of the conventional algorithmic ADC is modified so that it can operate as a single amplifier while being independent of the capacitor ratio and insensitive to the gain of the op-amp, and it has a high conversion efficiency by using an adaptive biasing amplifier. The proposed ADC is designed with 0.18-um Magnachip CMOS process, Spectre simulation shows that the power consumption per conversion speed is reduced by 37% compared with the conventional algorithmic ADC.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1645-1648
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• 2006

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.21-27
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• 2008

This paper describes a CMOS 16:1 binary-tree multiplexer(MUX) using $0.18-{\mu}m$ technology. To provide immunity for wide frequency range and process-and-temperature variations, the MUX adopts several delay compensation techniques. Simulation results show that the proposed MUX maintains the setup margins and hold margins close to the optimal value, i.e., 0.5UI, in wide frequency-range and in wide process-and-temperature variations, with standard deviation of 0.05UI approximately. These results represent that these proposed delay compensations are effective and the reliability is much improved although CMOS logic circuits are sensitive to those variations. The MUX is fabricated using $0.18-{\mu}m$ CMOS process, and tested with a test board. At power supply voltage of 1.8-V, maximum data-rate and area of the MUX is 1.65-Gb/s and 0.858 $mm^2$, respectively. The MUX dissipates a power of 24.12 mW, and output eye opening is 272.53 mV, 266.55 ps at 1.65-Gb/s operation.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.513-514
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• 2009

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.6
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• pp.231-237
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• 2016

This paper presents a multiband low phase noise CMOS VCO with wide frequency tunability using switched bondwire inductor bank. The combination of bondwire inductor and CMOS switch transistor enhances frequency tunability and improves phase noise characteristics. The proposed multiband VCO operates from 2.3GHz to 6.3GHz with phase noise of -136dBc/Hz and -122dBc/Hz at 1 MHz offset frequency, respectively. Switched bondwire inductor bank shows high quality factor(Q) at each frequency band, which allows better tradeoff between phase noise and power consumption. The proposed VCO is designed in TSMC 0.18um CMOS process and consumes 7.2 mW power resulting in figure of merit(FOM) of -189.3dBc/Hz at 1 MHz offset from 6GHz carrier frequency.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.10
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• pp.64-71
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• 2014

Multiplier performs a complex arithmetic operation in various signal processing algorithms such as multimedia and communication system. The multiplier also suffers from its relatively large signal propagation delay, high power dissipation, and large area requirement. This paper presents memristor-CMOS based reconfigurable multiplier reducing area occupation of the multiplier circuitry and increasing compatibility using optimized bit-width for various applications. The performance of the memristor-CMOS based reconfigurable multiplier are estimated with memristor SPICE model and 180 nm CMOS process under 1.8 V supply voltage. The circuit shows performance improvement of 61% for area, 38% for delay and 28% for power consumption respectively compared with the conventional reconfigurable multipliers. It also has an advantage for area reduction of 22% against a twin-precision multiplier.