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http://dx.doi.org/10.46670/JSST.2021.30.1.61

2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector  

Kim, Sang-Hwan (School of Electronic and Electrical Engineering, Kyungpook National University)
Kwen, Hyeunwoo (School of Electronic and Electrical Engineering, Kyungpook National University)
Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National University)
Kim, Young-Mo (School of Electronic and Electrical Engineering, Kyungpook National University)
Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National University)
Publication Information
Abstract
In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.
Keywords
CMOS image sensor; Binary operation; Gate/Body-Tied photodetector; High-speed operation;
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1 N. A. W. Dutton, L. Parmesan, A. J. Holmes, L. A. Grant and R. K. Henderson, "320 × 240 oversampled digital single photon counting image sensor", 2014 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, pp. 1-2, 2014.
2 L. Yao, K. Y. Yung, R. Khan, V. P. Chodavarapu and F. V. Bright, "CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays", IEEE Sens. J., Vol. 10, No. 12, pp. 1824-1832, 2010.   DOI
3 T. Tokuda, H. Yamada, K. Sasagawa and J. Ohta, "Polarization-analyzing image sensor based on standard CMOS technology", TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference, Denver, CO, pp. 331-333, 2009.
4 F. Raymundo, P. Martin-Gonthier, R. Molina, S. Rolando and P. Magnan, "Exploring the 3D integration technology for CMOS image sensors", 2013 IEEE 11th International Workshop of Electronics, Control, Measurement, Signals and their application to Mechatronics, Toulouse, pp. 1-5, 2013.
5 B.-S. Choi, S.-H. Kim, J. Lee, D. Seong, J.-K. Shin, J. Lim, S. Chang, J. Park, S.-J. Lee, and C.-M. Kyung, "In-Pixel Aperture CMOS Image Sensor for 2-D and 3-D Imaging", IEEE Sens. J., Vol. 18, No. 22, pp. 9163-9168, 2018.   DOI
6 Y. Kitamura, H. Aikawa, K. Kakehi, T. Yousyou, K. Eda, T. Minami, S. Uya, Y. Takegawa, H. Yamashita, Y. Kohyama, and T. Asami, "Suppression of crosstalk by using backside deep trench isolation for 1.12 ㎛ backside illuminated CMOS image sensor", 2012 International Electron Devices Meeting, San Francisco, CA, pp. 24.2.1-24.2.4., 2012.
7 K. Iiyama, H. Takamatsu and T. Maruyama, "Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- ㎛ CMOS Process", IEEE Photonics Technology Letters, Vol. 22, No. 12, pp. 932-934, 2010.   DOI
8 T. Hizawa, J. Matsuo, T. Ishida, H. Takao, H. Abe, K. Sawada, and M. Ishida, "32 × 32 pH Image Sensors for Real Time Observation of Biochemical Phenomena", TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, Lyon, pp. 1311-1312, 2007.
9 H. Alaibakhsh and M. A. Karami, "Analytical Modeling of Pinning Process in Pinned Photodiodes", IEEE Transactions on Electron Devices, Vol. 65, No. 10, pp. 4362-4368, 2018.   DOI
10 B. Steindl, R. Enne, S. Schidl and H. Zimmermann, "Linear Mode Avalanche Photodiode with High Responsivity Integrated in High-Voltage CMOS", IEEE Electron Device Letters, Vol. 35, No. 9, pp. 897-899, 2014.   DOI
11 A. O. Ercan, Feng Xiao, Xinqiao Liu, SukHwan Lim, A. El Gamal and B. Wandell, "Experimental high speed CMOS image sensor system and applications", SENSORS, 2002 IEEE, Orlando, FL, USA, pp. 15-20, 2002.
12 M. Lee, S. H. Jo, M. Bae, B. S. Choi, P. Choi, and J. K. Shin, "Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate", J. Sens. Sci. Technol., Vol. 23. No. 4, pp. 284-289, 2014.   DOI
13 M. M. El-Desouki, O. Marinov, M. J. Deen and Q. Fang, "CMOS Active-Pixel Sensor with In-Situ Memory for Ultrahigh-Speed Imaging", IEEE Sens. J., Vol. 11, No. 6, pp. 1375-1379, 2011.   DOI
14 H. H. Lee, S. H. Jo, M. Bae, B. S. Choi, H. Kim, H. K. Lyu, and J. K. Shin, "Highly sensitive gate/body-tied metal-oxide-semiconductor field-effect transistor-type photodetector with wavelength-selective metal grid structure using standard complementary metal-oxide-semiconductor technology", Sens. Mater., Vol. 27, No. 1, p. 135-142, 2015.