• Journal of IKEEE
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• v.19 no.4
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• pp.573-582
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• 2015

This paper presents the design of dual mode boost converter for energy harvesting. The designed converter boosts low voltage from energy harvester through a startup circuit. When the voltage goes above predefined value, supplied voltage to startup circuit is blocked by voltage detector. Boost controller makes the boosted voltage into $V_{OUT}$. The proposed circuit consists of oscillator for charge pump, charge pump, pulse generator, voltage detector, and boost controller. The proposed converter is designed and fabricated using a $0.18{\mu}m$ CMOS process. The designed circuit shows that minimum input voltage is 600mV, output is 3V and startup time is 20ms. The boost converter achieves 47% efficiency at a load current of 3mA.

• Journal of IKEEE
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• v.19 no.4
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• pp.506-513
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• 2015

In this paper, an output-capacitorless, low-dropout (LDO) regulator is designed, which consumes $4.5{\mu}A$ quiescent current. Proposed LDO regulator is realized using two amplifier for good load regulation and fast response time, which provide high gain, high bandwidth, and high slew rate. In addition, a one-shot current boosting circuit is added for current control to charge and discharge the parasitic capacitance at the pass transistor gate. As a result, response time is improved during load-current transition. The designed circuit is implemented through a $0.11-{\mu}m$ CMOS process. We experimentally verify output voltage fluctuation of 260mV and recovery time of $0.8{\mu}s$ at maximum load current 200mA.

• Journal of IKEEE
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• v.19 no.2
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• pp.201-209
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• 2015

This paper describes a battery charger using photovoltaic energy harvesting with MPPT control. The proposed circuit harvests maximum power from a PV(photovoltaic) cell by employing MPPT(Maximum Power Point Tracking) control and charges an external battery with the harvested energy. The charging state of the battery is controlled according to the signals from a battery management circuit. The MPPT control is implemented using linear relationship between the open-circuit voltage of a PV cell and its MPP voltage such that a pilot PV cell can track the MPP of a main PV cell in real time. The proposed circuit is designed in a $0.35{\mu}m$ CMOS process technology and its functionality has been verified through extensive simulations. The maximum efficiency of the designed entire system is 86.2% and the chip area including pads is $1.35mm{\times}1.2mm$.

• Journal of IKEEE
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• v.16 no.4
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• pp.322-327
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• 2012

In this paper, a digital phase-locked loop(Digital-PLL) circuit with a new phase-to-digital converter(P2D) is described. The proposed digital PLL is composed a P2D, a digital loop filter(DLF), and a digitally controlled oscillator(DCO). The P2D generates a digital code for a phase error. The proposed P2D used a binary phase frequency detector(BPFD) and a counter in place of a time-to-digital converter(TDC) for simple structure, compact area and low power consumption. The proposed circuit was designed with CMOS 0.18um process. The simulation shows the circuit operates with the 1.0 to 2.2GHz with the power consumption of 16.2mW at 1.65GHz and the circuit occupies the chip area of $0.096mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.83-92
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• 2004

In this thesis, a modified interpolation-2 6-bit 70MHz ADC is proposed minimizing chip area and power consumption, which includes an error correction circuit. The conventional flash ADC without interpolation comparators suffers from large chip area and more power consumption due to 2n resistors and 2n-1 comparators. Although the flash ADC with interpolation-4 comparators has small area, SNR, INL and DNL are degraded by comparison with the interpolation -2 comparator. We fabricated the proposed 6-bit ADC with interpolation-2 comparators using 0.18${\mu}{\textrm}{m}$ CMOS process. The ADC is composed of 32-resistors, 31 comparators, amplifiers, latches, error correction circuit, thermometer code detector and encoder As the results, power consumption is reduced to 40mW at 3.3V which is saving about 50% than a flash ADC without interpolation comparators, and area is reduced by 20%. SNR is increased by 75% in comparison with that of a flash ADC with interpolation-4 comparators.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.4
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• pp.39-45
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• 2015

In this paper, variable rate CDR(Clock and Data Recovery) circuit adopting blind oversampling architecture is presented. The clock recovery circuit is implemented by using wide range voltage controlled oscillator and band selection method and the data recovery circuit is designed to digital circuit used majority voting method in order to low power and small area. The designed low power variable clock and data recovery is implemented by wide range voltage controlled oscillator and digital data recovery circuit. The designed variable rate CDR is operated from 10 bps to 2 Mbps. The total power consumption is about 4.4mW at 1MHz clock. The supply voltage is 1.2V. The designed die area is $120{\mu}m{\times}75{\mu}m$ and this circuit is fabricated in $0.13{\mu}m$ CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.1A
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• pp.85-90
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• 2008

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-dB and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in $0.35{\mu}m$ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-dB of -13 dBm with an OIP3 of 3.7 dBm, while the up-converter with the degeneration resistors produces a P1-dB of -10 dBm with an OIP3 of 8.7 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.643-650
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• 2014

A hardware implementation of phase calculator for extracting 3D depth image from TOF(Time-Of-Flight) sensor is described. The designed phase calculator adopts redundant binary number systems and a pipelined architecture to improve throughput and speed. It performs arctangent operation using vectoring mode of DCORDIC(Differential COordinate Rotation DIgital Computer) algorithm. Fixed-point MATLAB simulations are carried out to determine the optimal bit-widths and number of iteration. The phase calculator has ben verified by FPGA-in-the-loop verification using MATLAB/Simulink. A test chip has been fabricated using a TSMC $0.18-{\mu}m$ CMOS process, and test results show that the chip functions correctly. It has 82,000 gates and the estimated throughput is 400 MS/s at 400Mhz@1.8V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.339-344
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• 2017

A novel structure of phase locked loop (PLL) which has small size and fast locking time with Early-late detector, Duty-rate modulator, and Lock status indicator (LSI) is proposed in this paper. The area of loop filter usually occupying the larger portion of the chip is minimized using a single small capacitor. While the conventional PLL with a single capacitor loop filter cannot work stably, the proposed PLL with two charge pumps works stably because the output voltage waveform of the proposed a single capacitor loop filter is the same as the output voltage waveform of the conventional 2nd-order loop filter. The two charge pumps are controlled by the Early-late detector which detects early-late status of UP and DN signals, and Duty-rate modulator which generates a steady duty-rate signal. Fast locking time is achieved using LSI. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.328-335
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• 2010

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.