• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.982-985
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• 1999

An efficient technique to trade off speed for resolution is the sigma-delta modulation (SDM). This paper proposes a new SDM architecture to improve conversion rates and SNR(Signal-to Noise Ratio) by using master clock and four divided clock. The charateristics of the proposed SDM are simulated in MATLAB environment. and optimizing the capacitor sizes is done by iterative processing. other analog characteristics are simulated using 0.65${\mu}{\textrm}{m}$ n-well CMOS process, double poly and single metal. The result of simulation shows that more increasing the effective bits of internal ADC/DAC, bigger the improvement of SNR.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.285-288
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• 2005

A 2.8 inch fully integrated SOP employing a high performance LTPS CMOS TFT technology has been developed for mobile display applications. The LCD module is directly interfaced with 3V 6-bit RGB source via timing control circuitry. The integrated data driver comprises a 6-bit hybrid type DAC with low power analog buffer.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.69.1-69.1
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• 2013

We are developing Adaptive Optics (AO) system for 1m telescope at Gwacheon National Science Museum Observatory. The beam spot of the Gwacheon 1m telescope. The tip-tilt correction system consists of a CMOS sensor, a tip-tilt mirror and a feed back loop. The beam spot location at the CMOS sensor indicates the tip-tilt components of the incoming light. The tip-tilt mirror is controlled by DAC output voltage calculated by proportional-integral-derivative (PID) controller. This system successfully corrects the tip-tilt motion of the spot.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.58-65
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• 2015

This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.35-42
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• 2010

This paper describes a 10 bit 80MHz CMOS D/A converter for wireless communication system. The proposed circuit in the paper is implemented with a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process. The architecture of the circuit consists of the 4bit LSB with binary decoder, and both the 3bit ULSB and the 3bit MSB with the thermometer decoder. The measurement results demonstrates SFDR of 60.42dBc at sampling frequency 80MHz, input frequency 1MHz and ENOB of 8.75bit. INL and DNL have been measured to be ${\pm}$0.38LSB and ${\pm}$0.32LSB and glitch energy is measured to be 4.6$pV{\cdot}s$. Total power dissipation is 48mW at 80MHz(maximum sampling frequency) with a single power supply of 1.8V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.1-8
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• 2007

A wideband continuous-time sigma delta modulator for wireless application is implemented in 130nm CMOS. The SNR for small input signal is improved using a proposed adaptive quantizer which can effectively scale the quantization level. The modulator comprises a second-order loop filter for low power consumption, 4-bit quantizer and DAC for low jitter sensitivity and high linearity. Designed circuit achieves peak SNR of 51.36B with 10MHz signal Bandwidth and 320MHz sampling frequency dissipating 30mW.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.5
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• pp.1349-1359
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• 1998

In this paper, presented is the result of a digital implementation of a FM stereo composite signal generator. The chip utilizing DDFS(Direct Digital Frequency Synthesizer architecture is implemented using $1.0\mu\textrm{m}$ CMOS gate-array technology thereby replacing analog componentry. To verify the process of generating composite signals a conventional logic simulation method was used. The processed chip was mounted on an evaluation PCB to test and analyze to signals. According to the measurement result obtained by using a 12-bit DAC, the digital FM composite signal generator produces a 74DB spectrally pure signal over its entire tuning range, which is superior to that of analog counterpart by 14dB in it spectral reponse. And further enhancements of the spectral response is expected to be achieved by using a high resolution digital to analog converter, such as a 16-bit DAC. The resulting signals is superior to the signal of the analoy circuitry typically used, in major characteristics such as S/N ratios, accuracy, tuning stability, and signal seperation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.21-26
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• 2005

An area efficient, low power switch-matrix semidigital FIR reconstruction filter for delta-sigma D/A converter is proposed. Filter coefficients are quantified to 7-bit and 7 current sources that correspond to each coefficient bit are used. The proposed semidigital FIR reconstruction filter is designed in a 0.25 um CMOS process and incorporates 1.5 mm$^{2}$ of active area and a power consumption is 3.8 mW at 2.5 V supply. The number of switching transistors is 1419 at 205 filter order. Simulation results show that the filter output has a dynamic range of 104 dB and 84 dB attenuation of out-of-band quantization noise.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.57-65
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• 2002

In this paper, a 2.5V 10-bit 300MSPS CMOS D/A Converter is described. The architecture of the D/A Converter is based on a current steering 8+2 segmented type, which reduces non-linearity error and other secondary effects. In order to achieve a high performance D/A Converter, a novel current cell with a low spurious deglitchnig circuit and a novel inverse thermomeer decoder are proposed. To verify the performance, it is integrated with $0.25{\mu}m$ CMOS 1-poly 5-metal technology. The effective chip area is $1.56mm^2$ and power consumption is about 84mW at 2.5V power supply. The simulation and experimental results show that the glitch energy is 0.9pVsec at fs=100MHz, 15pVsec at fs=300MHz in worst case, respectively. Further, both of INL and DNL are within ${\pm}$1.5LSB, and the SFDR is about 45dB when sampling, frequency, is 300MHz and output frequency is 1MHz.